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FDA59N30 の電気的特性と機能

FDA59N30のメーカーはFairchild Semiconductorです、この部品の機能は「300V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDA59N30
部品説明 300V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDA59N30 Datasheet, FDA59N30 PDF,ピン配置, 機能
FDA59N30
300V N-Channel MOSFET
Features
• 59A, 300V, RDS(on) = 0.056@VGS = 10 V
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 80 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
G DS
TO-3P
FDA Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FDA59N30
300
59
35
236
±30
1734
59
50
4.5
500
4
-55 to +150
300
Min.
--
0.24
--
Max.
0.25
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FDA59N30 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet.in/

1 Page





FDA59N30 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
VGS
15.0 V
102
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
Notes :
1. 250µ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0
VGS = 10V
VGS = 20V
Note : TJ = 25
25 50 75 100 125 150 175
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
9000
6000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
0
10-1
Note ;
Crss
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
2
150oC
25oC
-55oC
Notes :
1. VDS = 40V
2. 250µ s Pulse Test
4 6 8 10
VGS, Gate-Source Voltage [V]
12
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101 150
25
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10 VDS = 60V
VDS = 150V
8 VDS = 240V
6
4
2
Note : ID = 59A
0
0 10 20 30 40 50 60 70 80
QG, Total Gate Charge [nC]
FDA59N30 Rev. A
3 www.fairchildsemi.com
Free Datasheet http://www.datasheet.in/


3Pages


FDA59N30 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
FDA59N30 Rev. A
6 www.fairchildsemi.com
Free Datasheet http://www.datasheet.in/

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDA59N30

300V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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