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FDA59N25のメーカーはFairchild Semiconductorです、この部品の機能は「250V N-Channel MOSFET」です。 |
部品番号 | FDA59N25 |
| |
部品説明 | 250V N-Channel MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDA59N25ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
FDA59N25
N-Channel UniFETTM MOSFET
250 V, 59 A, 49 mΩ
Features
• RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A
• Low Gate Charge (Typ. 63 nC)
• Low Crss (Typ. 70 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• PDP TV
• Uninterruptible Power Supply
• AC-DC Power Supply
April 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
D
S
TO-3PN
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
Drain to Source Voltage
VDS(Avalanche) Repetitive Avalanche Voltage
VGSS
ID
Gate to Source Voltage
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
IDM Drain Current
- Pulsed
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1,2)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
©2005 Fairchild Semiconductor Corporation
FDA59N25 Rev. C2
1
FDA59N25
250
300
±30
59
35
236
1458
59
39.2
4.5
392
3.2
-55 to +150
300
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDA59N25
0.32
0.24
40
Unit
oC/W
www.fairchildsemi.com
1 Page Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
VGS
15.0 V
102
10.0 V
8.0 V
7.0 V
6.5 V
Bottom : 6.0 V
101
100
10-1
∝ Notes :
1. 250レs Pulse Test
2. TC = 25∩
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.12
0.10
0.08 VGS = 10V
0.06
0.04
0
VGS = 20V
*Note : TJ = 25oC
25 50 75 100 125 150 175
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
8000
6000
4000
2000
0
10-1
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
∝ Note ;
Crss
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
2
150oC
25oC
-55oC
∝ Notes :
1. VDS = 40V
2. 250レs Pulse Test
4 6 8 10
VGS, Gate-Source Voltage [V]
12
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101 150∩
25∩
∝ Notes :
1. VGS = 0V
2. 250レs Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10 VDS = 50V
VDS = 125V
8 VDS = 200V
6
4
2
∝ Note : ID = 59A
0
0 10 20 30 40 50 60 70
QG, Total Gate Charge [nC]
©2005 Fairchild Semiconductor Corporation
FDA59N25 Rev. C2
3
www.fairchildsemi.com
3Pages DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2005 Fairchild Semiconductor Corporation
FDA59N25 Rev. C2
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDA59N25 | 250V N-Channel MOSFET | Fairchild Semiconductor |