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FDA59N25 の電気的特性と機能

FDA59N25のメーカーはFairchild Semiconductorです、この部品の機能は「250V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDA59N25
部品説明 250V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDA59N25 Datasheet, FDA59N25 PDF,ピン配置, 機能
FDA59N25
N-Channel UniFETTM MOSFET
250 V, 59 A, 49 mΩ
Features
• RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A
• Low Gate Charge (Typ. 63 nC)
• Low Crss (Typ. 70 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• PDP TV
• Uninterruptible Power Supply
• AC-DC Power Supply
April 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
D
S
TO-3PN
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
Drain to Source Voltage
VDS(Avalanche) Repetitive Avalanche Voltage
VGSS
ID
Gate to Source Voltage
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
IDM Drain Current
- Pulsed
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1,2)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
©2005 Fairchild Semiconductor Corporation
FDA59N25 Rev. C2
1
FDA59N25
250
300
±30
59
35
236
1458
59
39.2
4.5
392
3.2
-55 to +150
300
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDA59N25
0.32
0.24
40
Unit
oC/W
www.fairchildsemi.com

1 Page





FDA59N25 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
VGS
15.0 V
102
10.0 V
8.0 V
7.0 V
6.5 V
Bottom : 6.0 V
101
100
10-1
Notes :
1. 250s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.12
0.10
0.08 VGS = 10V
0.06
0.04
0
VGS = 20V
*Note : TJ = 25oC
25 50 75 100 125 150 175
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
8000
6000
4000
2000
0
10-1
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Note ;
Crss
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
2
150oC
25oC
-55oC
Notes :
1. VDS = 40V
2. 250s Pulse Test
4 6 8 10
VGS, Gate-Source Voltage [V]
12
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101 150
25
Notes :
1. VGS = 0V
2. 250s Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10 VDS = 50V
VDS = 125V
8 VDS = 200V
6
4
2
Note : ID = 59A
0
0 10 20 30 40 50 60 70
QG, Total Gate Charge [nC]
©2005 Fairchild Semiconductor Corporation
FDA59N25 Rev. C2
3
www.fairchildsemi.com


3Pages


FDA59N25 電子部品, 半導体
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2005 Fairchild Semiconductor Corporation
FDA59N25 Rev. C2
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDA59N25

250V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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