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86T02GHのメーカーはAdvanced Power Electronicsです、この部品の機能は「AP86T02GH」です。 |
部品番号 | 86T02GH |
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部品説明 | AP86T02GH | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューと86T02GHダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Advanced Power
Electronics Corp.
AP86T02GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
G
D
S
BVDSS
RDS(ON)
ID
25V
6mΩ
75A
Description
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP86T02GJ) is
available for low-profile applications.
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
G
D
S
Rating
25
+20
75
62
300
75
0.5
-55 to 175
-55 to 175
TO-251(J)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2
110
Units
℃/W
℃/W
1
200808159
Free Datasheet http://www.datasheet4u.com/
1 Page 200
10V
T C =25 o C
7.0V
5.0V
150 4.5V
100
50 V G =3.0V
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
16
I D =30A
T c =25 ℃
12
8
4
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
20 T j =175 o C
10
T j =25 o C
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP86T02GH/J
120
10V
T C = 175 o C
7.0V
5.0V
90 4.5V
60
V G = 3 .0V
30
0
01234
V DS , Drain-to-Source Voltage (V)
5
Fig 2. Typical Output Characteristics
1.8
I D =45A
V G =10V
1.4
1.0
0.6
25 50 75 100 125 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
175
0.8
0.4
0.0
25 50 75 100 125 150 175
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
Free Datasheet http://www.datasheet4u.com/
3Pages ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-251
D
D1
E1 E
B2
B1 F
A
c1
A1
Millimeters
SYMBOLS
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.90 1.20 1.50
B1 0.50 0.69 0.88
B2 0.60 0.87 1.14
c 0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 5.20 5.35 5.50
E 6.70 7.00 7.30
E1 5.40 5.80 6.20
e ---- 2.30 ----
F 5.88 6.84 7.80
ee
1.All Dimensions Are in Millimeters.
c 2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-251
86T02GJ
YWWSSS
LOGO
Part Number
Package Code
meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y :Last Digit Of The Year
WW :Week
SSS :Sequence
6
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ 86T02GH データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
86T02GH | AP86T02GH | Advanced Power Electronics |
86T02GH-HF | AP86T02GH-HF | Advanced Power Electronics |
86T02GJ-HF | AP86T02GJ-HF | Advanced Power Electronics |