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PDF IXTT16N10D2 Data sheet ( Hoja de datos )
| Número de pieza | IXTT16N10D2 | |
| Descripción | Depletion Mode MOSFET | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Depletion Mode
MOSFET
N-Channel
Advance Technical Information
IXTH16N10D2
IXTT16N10D2
VDSX
ID(on)
=
>
≤RDS(on)
100V
16A
64mΩ
TO-247 (IXTH)
Symbol
VDSX
VDGX
VGSX
VGSM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
100
100
V
V
±20 V
±30 V
695 W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300
260
1.13 / 10
°C
°C
Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250μA
VGS(off)
VDS = 25V, ID = 1mA
IGSX VGS = ±20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
RDS(on)
ID(on)
VGS = 0V, ID = 8A, Note 1
VGS = 0V, VDS = 25V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
100 V
- 2.0
- 4.0 V
±100 nA
5 μA
75 μA
64 mΩ
16 A
G DS
D (Tab)
TO-268 (IXTT)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
© 2010 IXYS CORPORATION, All Rights Reserved
DS100258(4/10)
Free Datasheet http://www.datasheet4u.com/
1 page  
IXTH16N10D2
IXTT16N10D2
100,000
f = 1 MHz
Fig. 13. Capacitance
10,000
Ciss
1,000
Coss
Crss
100
0
1,000
5 10 15 20 25 30 35
VDS - Volts
Fig. 15. Forward-Bias Safe Operating Area
@ TC = 25ºC
40
Fig. 14. Gate Charge
5
4 VDS = 50V
3
I D = 8A
I G = 10mA
2
1
0
-1
-2
-3
-4
-5
0
20 40 60 80 100 120 140 160 180 200 220 240
QG - NanoCoulombs
Fig. 16. Forward-Bias Safe Operating Area
1,000
@ TC = 75ºC
RDS(on) Limit
100
10
1
1
1.000
TJ = 150ºC
TC = 25ºC
Single Pulse
0.300
10
VDS - Volts
25µs
100µs
100
RDS(on) Limit
1ms
10ms
100ms
10
DC TJ = 150ºC
TC = 75ºC
Fig. 17. Maximum Transient ThermSinaglle IPmulspeedance
1
100 1
10
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
hvjv
25µs
100µs
1ms
10ms
100ms
DC
100
0.100
0.010
0.001
0.00001
0.0001
0.001
© 2010 IXYS CORPORATION, All Rights Reserved
0.01
Pulse Width - Seconds
0.1
1 10
IXYS REF: T_16N10D2(8C)4-08-10
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTT16N10D2.PDF ] | |
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