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IKW15N120T2 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IKW15N120T2
部品説明 IGBT
メーカ Infineon
ロゴ Infineon ロゴ 



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IKW15N120T2 Datasheet, IKW15N120T2 PDF,ピン配置, 機能
IKW15N120T2
TrenchStop® 2nd generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Short circuit withstand time 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® 2nd generation for 1200 V applications offers :
G
E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Easy paralleling capability due to positive temperature coefficient
in VCE(sat)
Low EMI
PG-TO-247-3
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE Diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW15N120T2 1200V 15A
1.75V
175C K15T1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current (Tj = 150°C)
TC = 25C
TC = 110C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 175C
Diode forward current (Tj = 150°C)
TC = 25C
TC = 110C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 600V, Tj, start 175C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
30
15
60
60
25
15
60
20
10
235
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.2 12.06.2013

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