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PDF IRG4PC20UPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4PC20UPBF | |
| Descripción | UltraFast Speed IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97289
IRG4PC20UPbF
PROVISIONAL
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
C
E
GC
TO-247AC
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
Collector-toEmitter Breakdown Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cPulsed Collector Current
dClamped Inductive Load Current
Gate-to-Emitter Voltage
eReverse Voltage Avalanche Energy
Power Dissipation
Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Max.
600
13
6.5
52
52
±20
5.0
60
24
-55 to + 150
300 (0.063 in.) (1.6mm from case)
x x10lb in (1.1N m)
Units
V
A
V
mJ
W
°C
N
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
1
07/11/07
Free Datasheet http://www.datasheet4u.com/
1 page  
PROVISIONAL
IRG4PC20UPbF
1000
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
800 Coes = Cce + C gc
Cies
600
Coes
400
Cres
200
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20 VCE = 400V
IC = 6.5A
16
12
8
4
0
0 5 10 15 20 25
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
A
30
0.23 VCC = 480V
VGE = 15V
TJ = 25°C
I C = 6.5A
0.22
0.21
0.20
0
10 20 30 40 50
RG , Gate Resistance (Ω)
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4PC20UPBF.PDF ] | |
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