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PDF FDMC8360L Data sheet ( Hoja de datos )
| Número de pieza | FDMC8360L | |
| Descripción | N-Channel Shielded Gate Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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June 2013
FDMC8360L
N-Channel Shielded Gate Power Trench® MOSFET
40 V, 80 A, 2.1 mΩ
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A
Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
High performance technology for extremely low
rDS(on)
Termination is Lead-free
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Application
DC-DC Conversion
Pin 1
Pin 1
SS
SG
S
S
D
D
D
DD
D
Top Bottom
Power 33
SD
GD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
40
±20
80
27
240
294
54
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
2.3
53
°C/W
Device Marking
FDMC8360L
Device
FDMC8360L
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC8360L Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
SINGLE PULSE
RθJA = 125 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.0005
10-4
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2013 Fairchild Semiconductor Corporation
FDMC8360L Rev. C1
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC8360L.PDF ] | |
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