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AOWF10N60 の電気的特性と機能

AOWF10N60のメーカーはAlpha & Omega Semiconductorsです、この部品の機能は「10A N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AOWF10N60
部品説明 10A N-Channel MOSFET
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 




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AOWF10N60 Datasheet, AOWF10N60 PDF,ピン配置, 機能
AOW10N60/AOWF10N60
600V,10A N-Channel MOSFET
General Description
Product Summary
The AOW10N60 & AOWF10N60 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
Top View
TO-262
Bottom View
Top View
TO-262F
Bottom View
700V@150
10A
< 0.75
D
G
G DS
G
SD
S
GD
G
SD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOW10N60
AOWF10N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
10 10*
7.2 7.2*
36
4.4
290
580
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
250 28
2 0.22
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOW10N60
65
0.5
AOWF10N60
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.5
4.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev2: June 2010
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

1 Page





AOWF10N60 pdf, ピン配列
AOW10N60/AOWF10N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10V
16
12
6.5V
6V
100
VDS=40V
10
-55°C
8
4
VGS=5.5V
0
0 5 10 15 20 25 30
VDS (Volts)
Fig 1: On-Region Characteristics
1.4
125°C
1
25°C
0.1
2
3
468
VGS(Volts)
Figure 2: Transfer Characteristics
10
1.2
1.0
0.8
VGS=10V
0.6
0.4
0 4 8 12 16 20 24
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
0.9
0.8
-100
-50
0
50 100 150 200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
2.5 VGS=10V
ID=5A
2
1.5
1
0.5
0
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
1.0E+0400
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev2: June 2010
www.aosmd.com
Page 3 of 6
Free Datasheet http://www.datasheet4u.com/


3Pages


AOWF10N60 電子部品, 半導体
AOW10N60/AOWF10N60
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
Res istive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off)
tf
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L2
EAR= 1/2 LI AR
Vds
Vgs +
VDC Vdd
- Id
DUT
Vgs
BVDSS
IAR
Vds +
Vds -
Isd
Vgs
Ig
Diode RecoveryTes t Circuit & Waveforms
Qrr = - Idt
DUT
Vgs
L
Isd IF
trr
dI/dt
+
VDC Vdd
IRM
- Vds
Vdd
Rev2: June 2010
www.aosmd.com
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/

6 Page



ページ 合計 : 6 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
AOWF10N60

10A N-Channel MOSFET

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOWF10N60

10A N-Channel MOSFET

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOWF10N65

10A N-Channel MOSFET

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