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AOWF25S65のメーカーはAlpha & Omega Semiconductorsです、この部品の機能は「Power Transistor」です。 |
部品番号 | AOWF25S65 |
| |
部品説明 | Power Transistor | ||
メーカ | Alpha & Omega Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとAOWF25S65ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
AOW25S65/AOWF25S65
650V 25A α MOS TM Power Transistor
General Description
Product Summary
The AOW25S65 & AOWF25S65 have been fabricated
using the advanced αMOSTM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
Top View
TO-262
Bottom View
Top View
TO-262F
Bottom View
750V
104A
0.19Ω
26.4nC
5.8µC
D
G DS
AOW25S65
G
SD
S
D
G
AOWF25S65
G
SD
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
TC=25°C
Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOW25S65
AOWF25S65
650
±30
25 25*
16 16*
104
7
96
750
357 28
2.9
100
20
0.22
-55 to 150
300
AOW25S65
65
0.5
0.35
AOWF25S65
65
--
4.5
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Dec 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 Page AOW25S65/AOWF25S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
10V
40 7V
6V
30
5.5V
20
5V
10
VGS=4.5V
0
0 5 10 15
VDS (Volts)
Figure 1: On-Region Characteristics@25°C
20
35
30
10V
6V 7V
25 5.5V
20
15 5V
10
VGS=4.5V
5
0
0 5 10 15 20
VDS (Volts)
Figure 2: On-Region Characteristics@125°C
1000
100
10
VDS=20V
125°C
1
0.1
25°C
-55°C
0.5
0.4
0.3
0.2
0.1
VGS=10V
0.01
2
468
VGS(Volts)
Figure 3: Transfer Characteristics
10
3
2.5 VGS=10V
ID=12.5A
2
1.5
1
0.5
0
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
0.0
0
10 20 30 40 50 60
ID (A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
1.2
1.1
1
0.9
0.8
0.7
-100
-50 0 50 100 150 200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Rev0: Dec 2011
www.aosmd.com
Page 3 of 6
Free Datasheet http://www.datasheet4u.com/
3Pages AOW25S65/AOWF25S65
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
Res istive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off)
tf
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI AR
Vds
+Vgs
VDC Vdd
- Id
DUT
Vgs
BVDSS
IAR
Vds +
Vds -
Isd
Vgs
Ig
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
DUT
Vgs
L
Isd IF
trr
dI/dt
+
VDC Vdd
IRM
- Vds
Vdd
Rev0: Dec 2011
www.aosmd.com
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ AOWF25S65 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AOWF25S65 | Power Transistor | Alpha & Omega Semiconductors |