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PDF AOW12N65 Data sheet ( Hoja de datos )

Número de pieza AOW12N65
Descripción 12A N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AOW12N65/AOWF12N65
650V, 12A N-Channel MOSFET
General Description
Product Summary
The AOW12N65 & AOWF12N65 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
Top View
TO-262
Bottom View
Top View
TO-262F
Bottom View
750V@150
12A
< 0.72
D
G DS
AOW12N65
G
SD
S
D
G
AOWF12N65
G
SD
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOW12N65
AOWF12N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
12 12*
7.7 7.7*
48
5
375
750
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
278 28
2.2 0.22
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOW12N65
65
0.5
AOWF12N65
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.45
4.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev1:Jul 2011
www.aosmd.com
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AOW12N65 pdf
AOW12N65/AOWF12N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOW12N65 (Note F)
100
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOWF12N65 (Note F)
1000
Rev1: Jul 2011
www.aosmd.com
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