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PDF AOW11S65 Data sheet ( Hoja de datos )
| Número de pieza | AOW11S65 | |
| Descripción | Power Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOW11S65/AOWF11S65
650V 11A α MOS TM Power Transistor
General Description
Product Summary
The AOW11S65 & AOWF11S65 have been fabricated
using the advanced αMOSTM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
Top View
TO-262
Bottom View
Top View
TO-262F
Bottom View
750V
45A
0.399Ω
13.2nC
2.9µJ
D
G DS
AOW11S65
G
SD
S
D
G
AOWF11S65
G
SD
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
TC=25°C
Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOW11S65
AOWF11S65
650
±30
11 11*
8 8*
45
2
60
120
198 28
1.6
100
20
0.22
-55 to 150
300
AOW11S65
65
0.5
0.63
AOWF11S65
65
--
4.5
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Dec 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AOW11S65/AOWF11S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
120
90
60
30
0
25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Avalanche energy
12
10
8
6
4
2
0
0
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note B)
150
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.63°C/W
0.1
Single Pulse
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOW11S65 (Note F)
10
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=4.5°C/W
0.1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOWF11S65 (Note F)
100
Rev0: Dec 2011
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOW11S65.PDF ] | |
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