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AOWF10N65 の電気的特性と機能

AOWF10N65のメーカーはAlpha & Omega Semiconductorsです、この部品の機能は「10A N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AOWF10N65
部品説明 10A N-Channel MOSFET
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 




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AOWF10N65 Datasheet, AOWF10N65 PDF,ピン配置, 機能
AOW10N65/AOWF10N65
650V,10A N-Channel MOSFET
General Description
Product Summary
The AOW10N65/AOWF10N65 is fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability this
device can be adopted quickly into new and existing offline
power supply designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-262
Top View
Bottom View
TO-262F
Top View
Bottom View
750V@150
10A
< 1
D
S
GD
AOW10N65
G
SD
DS
G
AOWF10N65
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOW10N65
AOWF10N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
10 10*
6.2 6.2*
36
3.4
173
347
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
250 28
2 0.22
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOW10N65
65
0.5
0.5
AOWF10N65
65
--
4.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev1: Nov 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

1 Page





AOWF10N65 pdf, ピン配列
AOW10N65/AOWF10N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
18 100
15
10V
6.5V
VDS=40V
-55°C
12 10
6V
9 125°C
6
VGS=5.5V
1
25°C
3
0
0 5 10 15 20 25 30
VDS (Volts)
Fig 1: On-Region Characteristics
0.1
2
468
VGS(Volts)
Figure 2: Transfer Characteristics
10
1.6 3
1.4 VGS=10V
1.2
2.5 VGS=10V
ID=5A
2
1.0 1.5
0.8 1
0.6
0.4
0 4 8 12 16 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0.5
0
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.1
1
0.9
0.8
-100 -50 0 50 100 150 200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
1.0E+02
1.0E+01
1.0E+00
1.0E-01
125°C
25°C
1.0E2-.022
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev1: Nov 2011
www.aosmd.com
Page 3 of 6
Free Datasheet http://www.datasheet4u.com/


3Pages


AOWF10N65 電子部品, 半導体
AOW10N65/AOWF10N65
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
Res istive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off)
tf
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI AR
Vds
Vgs +
VDC Vdd
- Id
DUT
Vgs
Vds +
Vds -
Isd
Vgs
Ig
Diode RecoveryTes t Circuit & Waveforms
Qrr = - Idt
DUT
Vgs
L
Isd IF
trr
dI/dt
+
VDC Vdd
IRM
- Vds
BVDSS
IAR
Vdd
Rev1: Nov 2011
www.aosmd.com
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/

6 Page



ページ 合計 : 6 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
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10A N-Channel MOSFET

Alpha & Omega Semiconductors
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AOWF10N60

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Alpha & Omega Semiconductors
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AOWF10N65

10A N-Channel MOSFET

Alpha & Omega Semiconductors
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