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PDF AOW10N60 Data sheet ( Hoja de datos )
| Número de pieza | AOW10N60 | |
| Descripción | 10A N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOW10N60/AOWF10N60
600V,10A N-Channel MOSFET
General Description
Product Summary
The AOW10N60 & AOWF10N60 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
Top View
TO-262
Bottom View
Top View
TO-262F
Bottom View
700V@150℃
10A
< 0.75Ω
D
G
G DS
G
SD
S
GD
G
SD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOW10N60
AOWF10N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
10 10*
7.2 7.2*
36
4.4
290
580
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
250 28
2 0.22
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOW10N60
65
0.5
AOWF10N60
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.5
4.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev2: June 2010
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AOW10N60/AOWF10N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOW10N60 (Note F)
100
10
D=TDo=n/TTon/T
TJ,PTK=J,PTKC=+TPCD+MP.ZDMθJ.CZ.θRJCθJ.CRθJC
1 RθJCR=θ4JC.=5°4C.5/W°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOWF10N60 (Note F)
100
Rev2: June 2010
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOW10N60.PDF ] | |
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