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PDF AON2801 Data sheet ( Hoja de datos )
| Número de pieza | AON2801 | |
| Descripción | Dual P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON2801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON2801/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
AON2801 and AON2801L are electrically identical.
-RoHS Compliant
-Halogen Free*
VDS (V) = -20V
ID = -3A
(VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -4.5V)
RDS(ON) < 160mΩ (VGS = -2.5V)
RDS(ON) < 200mΩ (VGS = -1.8V)
DFN 2x2 Package
S1 G1 D2
D1 D2
D1 G2 S2
Top Bottom
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
CurrentA
TA=70°C
Pulsed Drain Current C
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PDSM
TJ, TSTG
G1 G2
S1
Maximum
-20
±8
-3
-2.3
-15
1.5
0.95
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient B
Maximum Junction-to-Ambient B
t ≤ 10s
Steady-State
t ≤ 10s
Steady-State
Symbol
RθJA
RθJA
Typ
35
65
120
175
Max
45
85
155
235
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page  
AON2801
VDC
Vgs
Ig
Vds
Vgs
Rg
Vgs
Gate Charge Test Circuit & Waveform
Vgs
-10V
Qg
Vds
VDC
DUT
Qgs Qgd
Resistive Switching Test Circuit & Waveforms
RL
Vgs
ton
td(on) t r
toff
t d (o ff)
tf
DUT
Vdd
VDC
Vds
Charge
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Vgs
Q rr = - Idt
+
Vdd
VDC
-
-Isd
-Vds
-I F trr
dI/dt
-I RM
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AON2801.PDF ] | |
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