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PDF AON2707 Data sheet ( Hoja de datos )
| Número de pieza | AON2707 | |
| Descripción | 30V P-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AON2707
30V P-Channel MOSFET
with Schottky Diode
General Description
Product Summary
The AON2707 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A Schottky
diode is provided to facilitate the implementation of a
bidirectional blocking switch, or for DC-DC conversion
applications.
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS=-4.5V)
RDS(ON) (at VGS=-2.5V)
Typical ESD protection
VKA
IF
VF (at IF=1A)
-30V
-4A
< 117mΩ
< 138mΩ
< 193mΩ
HBM Class 2
20V
2A
<0.45V
DFN 2x2
Top View
Bottom View
K
G
S
K
D
A
NC
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±12
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
-4
ID -3
IDM -15
Schottky reverse voltage
VKA
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Forward Current B
IF
IFM
TA=25°C
Power Dissipation A TA=70°C
2.8
PD 1.8
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter: MOSFET
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Parameter: Schottky
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Symbol
RθJA
t ≤ 10s
Steady-State
RθJA
Typ
35
65
36
67
D
G
S
Schottky
20
2.5
1.5
15
2.7
1.7
-55 to 150
Max
45
85
47
87
A
K
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
Rev0: Dec. 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AON2707
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 200
125°C
1
25°C
160
120
80
40
0.1
0
0.2 0.4 0.6 0.8
1
VF (V)
Figure 12: Schottky Forward Characteristics
1.2
0
0 5 10 15 20
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.42
0.39
0.36
0.33
0.30
0.27
0.24
0
IF=1A
IF=0.5A
25 50 75 100 125
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
150
10
VKA=20V
1
VKA=16V
0.1
0.01
0
25 50 75 100 125
Temperature (°C)
Figure 15: Schottky Leakage Current vs.
Junction Temperature
150
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=87°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
1E-05
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance (Note E)
100
1000
Rev0: Dec. 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AON2707.PDF ] | |
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