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PDF AOT2606L Data sheet ( Hoja de datos )

Número de pieza AOT2606L
Descripción 60V N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AOT2606L/AOB2606L/AOTF2606L
60V N-Channel MOSFET
General Description
Product Summary
The AOT2606L & AOB2606L & AOTF2606L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON),
Ciss and Coss. This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D2PAK
D
60V
72A
< 6.5m(< 6.2mΩ∗)
D
AOT2606L
DS
G
AOTF2606L
S
GD
G
AOB2606L
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT2606L/AOB2606L
AOTF2606L
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
72
56
260
54
38
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
13
10
60
180
TC=25°C
Power Dissipation B TC=100°C
PD
115
57.5
36.5
18
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT2606L/AOB2606L
15
60
1.3
AOTF2606L
15
60
4.1
* Surface mount package TO263
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1 : Mar. 2012
www.aosmd.com
Page 1 of 7
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1 page




AOT2606L pdf
AOT2606L/AOB2606L/AOTF2606L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
100.0
10.0
RDS(ON)
1.0
TJ(Max)=175°C
0.1 TC=25°C
10µs
100µs
1ms
10ms
DC
0.0
0.01
0.1
1 10
VDS (Volts)
100
Figure 9: Maximum Forward Biased
Safe Operating Area for AOTF2606L
1000
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=4.1°C/W
0.1
1000
800
TJ(Max)=175°C
TC=25°C
600
400
200
0
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s) 17
Figure 10: Single Pulse Power Rating Jun5ction-to-Case
for AOTF2606L (Note F) 2
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
18
0.01
0.001
1E-05
Single Pulse
PD
Ton
T
0.0001
0.001
40
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2606L (Note F)
10
Rev 1 : Mar. 2012
www.aosmd.com
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