AO3416 Datasheet PDF - Freescale
| Part Number | AO3416 | |
| Description | N-Channel Enhancement Mode Field Effect Transistor | |
| Manufacturers | Freescale | |
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AO3416, AO3416L
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3416 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. It is ESD protected. AO3416L ( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 20V
ID = 6.5 A
RDS(ON) < 22mΩ (VGS = 4.5V)
RDS(ON) < 26mΩ (VGS = 2.5V)
RDS(ON) < 34mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
6.5
5.2
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AO3416 electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ AO3416.PDF Datasheet ] | |
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