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PDF AO3415 Data sheet ( Hoja de datos )
| Número de pieza | AO3415 | |
| Descripción | 20V P-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO3415
20V P-Channel MOSFET
General Description
Product Summary
The AO3415 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch applications.
VDS
ID (at VGS=-4.5V)
RDS(ON) (at VGS= -4.5V)
RDS(ON) (at VGS= -2.5V)
RDS(ON) (at VGS= -1.8V)
ESD protected
-20V
-4A
< 41mΩ
< 53mΩ
< 65mΩ
SOT23
Top View
Bottom View
D
D
G
SG
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-20
±8
-4
-3.5
-30
1.5
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
80
100
52
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 7: Sep 2011
www.aosmd.com
Page 1 of 5
Free Datasheet http://www.datasheet4u.com/
1 page  
AO3415
VDC
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
-10V
Qg
Vds
VDC
DUT
Qgs Qgd
Vds
Vgs
Rg
Vgs
Resistive Switching Test Circuit & W aveforms
RL
Vgs
ton
td(o n) t r
to ff
t d (o ff)
tf
DUT VDC Vdd
Vds
Charge
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & W aveforms
Vgs
Q rr = - Idt
+
Vdd
VDC
-
-Isd
-Vds
-I F t rr
dI/dt
-I RM
Vdd
Rev 7: Sep 2011
www.aosmd.com
Page 5 of 5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO3415.PDF ] | |
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