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IRFSL3607PBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL3607PBF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 11 pages
		

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IRFSL3607PBF Datasheet, IRFSL3607PBF PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
G
PD - 97308C
IRFB3607PbF
IRFS3607PbF
IRFSL3607PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID
75V
7.34m:
9.0m:
80A
D
S
GD
TO-220AB
IRFB3607PbF
G
Gate
DD
S
G
D2Pak
IRFS3607PbF
D
Drain
S
GD
TO-262
IRFSL3607PbF
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÙAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RJC
Parameter
kJunction-to-Case
RCS
RJA
RJA
Case-to-Sink, Flat Greased Surface, TO-220
jJunction-to-Ambient, TO-220
jkJunction-to-Ambient (PCB Mount) , D2Pak
www.irf.com
Max.
80™
56™
310
140
0.96
± 20
-55 to + 175
300
x x10lb in (1.1N m)
120
46
14
Typ.
–––
0.50
–––
–––
Max.
1.045
–––
62
40
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
1
01/20/12
Free Datasheet http://www.datasheet4u.com/

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