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PDF MJE13003 Data sheet ( Hoja de datos )

Número de pieza MJE13003
Descripción NPN EPITAXIAL SILICON TRANSISTOR
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo

MJE13003 datasheet pdf


1. NPN Power Transistor - UTC






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UNISONIC TECHNOLOGIES CO., LTD
MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE .
FEATURES
* Reverse Biased SOA with Inductive Load @ Tc=100
* Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100
Typical tc = 290ns @ 1A, 100 .
* 700V Blocking Capability
1
TO-220
APPLICATIONS
* Switching Regulator’s, Inverters
* Motor Controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MJE13003-x-TA3-F-T
MJE13003L-x-TA3-F-T
Note: x: Rank, refer to Classification of hFE1.
*Pb-free plating product number: MJE13003L
Package
Pin Assignment
1 23
TO-220 B C E
Packing
Tube
MJE13003L-x-TA3-F-T
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1)T: Tube
(2) refer to Pin Assignment
(3) TA3: TO-220
(4) x: refer to Classification of hFE1
(5) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 7
QW-R203-017,F
Free Datasheet http://www.datasheet4u.com/

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MJE13003 pdf
MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TC = 25 ; TJ(pk) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC 25 . Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5 may be found at any
case temperature by using the appropriate curve on Figure 7.
TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified
under clamped conditions so that the device is never subjected to an avalanche mode. Figure 6 gives PBSOA
characteristics.
The Safe Operating Area of figures 5 and 6 are specified ratings (for these devices under the test conditions shown.)
Figure 5. Active Region Safe Operating Area
10
5
2 10 ms
100 s
1 5.0 ms
0.5 dc 1.0 ms
Tc=25
0.2
Thermal Limit(Single Pule)
0.1
Bonding Wire Limit
0.05
Second Breakdown Limit
Curves Apply Below Rated VCEO
0.02
0.01
5
10 20
50 100 200 300
Collector-Emitter Voltage, VCE (V)
500
Figure 6. Reverse Bias Safe Operating Area
1.6
1.2
TJ 100
0.8 IB1=1A
VBE(OFF)=9V
0.4
0
0
5V
3V
1.5V
100 200 300 400 500 600 700
Collector-Emitter Clamp Voltage,VCE (V)
800
Figure 7. Forward Bias Power Derating
1
Second Breakdown
Derating
0.8
0.6
Thermal
Derating
0.4
0.2
0
20 40 60 80 100 120 140 160
Case Temperature, TC ( )
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R203-017,F
Free Datasheet http://www.datasheet4u.com/

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