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55NF06のメーカーはThinki Semiconductorです、この部品の機能は「N-CHANNEL POWER MOSFET TRANSISTOR」です。 |
部品番号 | 55NF06 |
| |
部品説明 | N-CHANNEL POWER MOSFET TRANSISTOR | ||
メーカ | Thinki Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと55NF06ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
55NF06
®
55NF06
Pb
Pb Free Plating Product
N-CHANNEL POWER MOSFET TRANSISTOR
50 AMPERE 60 VOLT
N-CHANNEL POWER MOSFET
DESCRIPTION
Thinkisemi 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
FEATURES
* RDS(ON) = 23mȍ@VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
SYMBOL
U55NF06 TO-251/IPAK
P55NF06 TO-220
F55NF06 TO-220F
D55NF06 TO-252/DPAK
APPLICATION
Auotmobile Convert System
Networking DC-DC Power System
Power Supply etc..
12 3
TO-251/IPAK
12 3 TO-220/TO-220F
1 2 3 TO-252/DPAK
1.Gate
2.Drain
ABSOLUTE MAXIMUM RATINGS
3.Source
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60 V
Gate-Source Voltage
VGSS
±20 V
Continuous Drain Current
TC = 25°C
TC = 100°C
ID
50 A
35 A
Pulsed Drain Current (Note 2)
IDM 200 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
480 mJ
13 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7 V/ns
TO-220
120 W
Power Dissipation (TC=25°C)
TO-251
PD
90 W
TO-252
136 W
Junction Temperature
TJ
+150
°C
Operation and Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by TJ
3. L=0.38mH, IAS=50A, VDD=25V, RG=20ȍ, Starting TJ=25°C
4. ISD50A, di/dt300A/ȝs, VDDBVDSS, Starting TJ=25°C
Page 1/6
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
1 Page 55NF06
TEST CIRCUITS AND WAVEFORMS
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
D.U.T.
+
-
+
VDS
-
L
RG
Same Type
VGS as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D=
Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
®
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
© 2006 Thinki Semiconductor Co.,Ltd.
Page 3/6
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
3Pages 55NF06
®
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs.
Junction Temperature
1.2
1.1
1.0
0.9
0.8
-100 -50 0
*Note:
1. VGS=0V
2. ID=250μA
50 100 150 200
Junction Temperature, TJ (°C)
Maximum Safe Operating
103 Operation in This
Area by RDS (on)
102 100μs
1ms
10ms
101
10ms
100 *Note:
1. Tc=25°C
2. TJ=150°C
10-1 3. Single Pulse
10-1 100 101 102
Drain-Source Voltage, VDS (V)
On-Resistance Variation vs.
Junction Temperature
3.0
2.5
2.0
1.5
1.0
*Note:
0.5 1. VGS=10V
0.0 2. ID=25A
-50 0 50 100 150
Junction Temperature, TJ (°C)
Maximum Drain Current vs.
Case Temperature
50
40
30
20
10
0
25 50
75 100 125 150
Case Temperature, TC (°C)
© 2006 Thinki Semiconductor Co.,Ltd.
Page 6/6
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ 55NF06 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
55NF06 | N-CHANNEL POWER MOSFET TRANSISTOR | THINKISEMI |
55NF06 | STP55NF06 | ST Microelectronics |
55NF06 | N-CHANNEL POWER MOSFET TRANSISTOR | Thinki Semiconductor |