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MBR760 の電気的特性と機能

MBR760のメーカーはTaiwan Semiconductorです、この部品の機能は「(MBR735 - MBR7150) 7.5 AMPS. Schottky Barrier Rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 MBR760
部品説明 (MBR735 - MBR7150) 7.5 AMPS. Schottky Barrier Rectifiers
メーカ Taiwan Semiconductor
ロゴ Taiwan Semiconductor ロゴ 




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MBR760 Datasheet, MBR760 PDF,ピン配置, 機能
MBR735 - MBR7150
7.5 AMPS. Schottky Barrier Rectifiers
TO-220AC
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.16(4.06)
.14(3.56)
PIN1
2
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
PIN 1
PIN 2
.025(0.64)
.014(0.35)
CASE
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBR MBR MBR MBR MBR MBR
735 745 750 760 790 7100
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM 35 45 50 60 90 100
VRMS 24 31 35 42 63 70
VDC 35 45 50 60 90 100
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
7.5
Peak Repetitive Forward Current (Square Wave, 20KHz) at
Tc=105oC
IFRM
15.0
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=7.5A,Tc=25
IF=7.5A,Tc=125
IF=15A,Tc=25
IF=15A,Tc=125
IFSM
IRRM
VF
1.0
0.57
0.84
0.72
150
0.75
0.65
0.5
0.92
0.82
Maximum Instantaneous Reverse Current @ Tc =25 oC
at Rated DC Blocking Voltage (Note 1) @ Tc=125 oC
IR
0.1
15.0
0.1
10
0.1
5.0
Voltage Rate of Change (Rated VR)
dv/dt
10,000
Typical Junction Capactance
Cj 360 280 200
Maximum Thermal Resistance, (Note 3)
Operating Junction Temperature Range
RθJC
RθJA
TJ
5.0
15.0
-65 to +150
Storage Temperature Range
TSTG
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plated.
-65 to +175
MBR
7150
150
105
150
0.95
0..92
160
Units
V
V
V
A
A
A
A
V
mA
mA
V/uS
pF
oC/W
oC
oC
Version: A06
Free Datasheet http://www.datasheet4u.com/

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共有リンク

Link :


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Fairchild Semiconductor
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