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PDF MUR3040PA Data sheet ( Hoja de datos )
| Número de pieza | MUR3040PA | |
| Descripción | (MUR3005 - MUR3060) 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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MUR3005 thru MUR3060
®
MUR3005 thru MUR3060
Pb Free Plating Product
Pb
30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
260oC, 0.16”(4.06mm)from case for 10 seconds
Mechanical Data
Cases: TO-3PN Package Type
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 grams
TO-3PN
.142(3.60)
.125(3.20)
.604(15.35)
.620(15.75)
Unit: inch (mm)
.199(5.05)
.175(4.45)
.126(3.20)
.110(2.80)
.050(1.25)
.045(1.15)
.225(5.70)
.204(5.20)
.095(2.40)
.225(5.70)
.204(5.20)
.030(0.75)
.017(0.45)
Positive
Suffix "PT"
Negative
Suffix "PA"
Doubler
Suffix "GD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "PT"
Common Anode Suffix "PA"
Anode and Cathode Coexistence Suffix "GD"
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
MUR3005PT MUR3010PT MUR3020PT MUR3030PT MUR3040PT MUR3060PT
SYMBOL MUR3005PA MUR3010PA MUR3020PA MUR3030PA MUR3040PA MUR3060PA UNIT
MUR3005GD MUR3010GD MUR3020GD MUR3030GD MUR3040GD MUR3060GD
VRRM
50
100 200 300 400 600 V
VRMS
35
70 140 210 280 420 V
VDC 50 100 200 300 400 600 V
Maximum Average Forward Rectified
Current TC=125oC
IF(AV)
30.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
300 A
Maximum Instantaneous Forward Voltage
@ 15.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
VF
IR
Trr
CJ
0.95
35
1.3
10
500
150
1.5 V
uA
uA
60 nS
pF
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to +150
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MUR3040PA.PDF ] | |
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