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UPA677TBのメーカーはRenesasです、この部品の機能は「N-CHANNEL MOS FIELD EFFECT TRANSISTOR」です。 |
部品番号 | UPA677TB |
| |
部品説明 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
メーカ | Renesas | ||
ロゴ | |||
このページの下部にプレビューとUPA677TBダウンロード(pdfファイル)リンクがあります。 Total 8 pages
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Free Datasheet http://www.datasheet4u.com/
1 Page DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA677TB
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA677TB is a switching device which can be driven
directly by a 2.5 V power source.
The µPA677TB features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A)
RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A)
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
• Two MOS FET circuits in same size package as SC-70
PACKAGE DRAWING (Unit: mm)
0.2
+0.1
-0
0.15
+0.1
-0.05
654
123
0.65 0.65
1.3
2.0 ±0.2
0 to 0.1
0.7
0.9 ±0.1
ORDERING INFORMATION
PART NUMBER
µPA677TB
Marking: WA
PACKAGE
SC-88 (SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS ±12 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation(2units) Note2
ID(DC)
ID(pulse)
PT
±0.35
±1.40
0.2
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 Board of 2500 mm2 x 1.1 mm 2units total.
PIN CONNECTUON (Top View)
654
1: Source 1
2: Gate 1
3: Drain 2
4: Source 2
5: Gate 2
6: Drain 1
123
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD = ±200 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16598EJ1V0DS00 (1st edition)
Date Published March 2003 NS CP(K)
Printed in Japan
2003
Free Datasheet http://www.datasheet4u.com/
3Pages DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.2
Pulsed
1
VGS = 2.5 V, ID = 0.15 A
0.8
0.6
0.4
VGS = 4.0 V, ID = 0.30 A
0.2 VGS = 4.5 V, ID = 0.30 A
0
- 50
0
50 100
Tch - Channel Temperature - °C
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
VGS = 4.5 V
Pulsed
1
0.8
TA = 125°C
75°C
25°C
−25°C
0.6
0.4
0.2
0
0.01
0.1 1
ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
VGS = 2.5 V
Pulsed
1
TA = 125°C
75°C
0.8
0.6
0.4 25°C
−25°C
0.2
0
0.01
0.1 1
ID - Drain Current - A
10
µPA677TB
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.2
ID = 0.30 A
Pulsed
1
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
12
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
VGS = 4.0 V
Pulsed
1
TA = 125°C
0.8
75°C
25°C
−25°C
0.6
0.4
0.2
0
0.01
0.1 1
ID - Drain Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
VGS = 0 V
f = 1.0 M H z
10
C iss
10 Coss
C rss
1
0.1
1 10
VDS - Drain to Source Voltage - V
100
4 Data Sheet G16598EJ1V0DS
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ UPA677TB データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
UPA677TB | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
UPA677TB | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | Renesas |