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UPA677TB の電気的特性と機能

UPA677TBのメーカーはRenesasです、この部品の機能は「N-CHANNEL MOS FIELD EFFECT TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA677TB
部品説明 N-CHANNEL MOS FIELD EFFECT TRANSISTOR
メーカ Renesas
ロゴ Renesas ロゴ 




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UPA677TB Datasheet, UPA677TB PDF,ピン配置, 機能
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Free Datasheet http://www.datasheet4u.com/

1 Page





UPA677TB pdf, ピン配列
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA677TB
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA677TB is a switching device which can be driven
directly by a 2.5 V power source.
The µPA677TB features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
RDS(on)1 = 0.57 MAX. (VGS = 4.5 V, ID = 0.30 A)
RDS(on)2 = 0.60 MAX. (VGS = 4.0 V, ID = 0.30 A)
RDS(on)3 = 0.88 MAX. (VGS = 2.5 V, ID = 0.15 A)
Two MOS FET circuits in same size package as SC-70
PACKAGE DRAWING (Unit: mm)
0.2
+0.1
-0
0.15
+0.1
-0.05
654
123
0.65 0.65
1.3
2.0 ±0.2
0 to 0.1
0.7
0.9 ±0.1
ORDERING INFORMATION
PART NUMBER
µPA677TB
Marking: WA
PACKAGE
SC-88 (SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS ±12 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation(2units) Note2
ID(DC)
ID(pulse)
PT
±0.35
±1.40
0.2
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg 55 to +150 °C
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on FR-4 Board of 2500 mm2 x 1.1 mm 2units total.
PIN CONNECTUON (Top View)
654
1: Source 1
2: Gate 1
3: Drain 2
4: Source 2
5: Gate 2
6: Drain 1
123
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD = ±200 V TYP. (C = 200 pF, R = 0 , Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16598EJ1V0DS00 (1st edition)
Date Published March 2003 NS CP(K)
Printed in Japan
2003
Free Datasheet http://www.datasheet4u.com/


3Pages


UPA677TB 電子部品, 半導体
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.2
Pulsed
1
VGS = 2.5 V, ID = 0.15 A
0.8
0.6
0.4
VGS = 4.0 V, ID = 0.30 A
0.2 VGS = 4.5 V, ID = 0.30 A
0
- 50
0
50 100
Tch - Channel Temperature - °C
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
VGS = 4.5 V
Pulsed
1
0.8
TA = 125°C
75°C
25°C
25°C
0.6
0.4
0.2
0
0.01
0.1 1
ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
VGS = 2.5 V
Pulsed
1
TA = 125°C
75°C
0.8
0.6
0.4 25°C
25°C
0.2
0
0.01
0.1 1
ID - Drain Current - A
10
µPA677TB
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.2
ID = 0.30 A
Pulsed
1
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
12
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
VGS = 4.0 V
Pulsed
1
TA = 125°C
0.8
75°C
25°C
25°C
0.6
0.4
0.2
0
0.01
0.1 1
ID - Drain Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
VGS = 0 V
f = 1.0 M H z
10
C iss
10 Coss
C rss
1
0.1
1 10
VDS - Drain to Source Voltage - V
100
4 Data Sheet G16598EJ1V0DS
Free Datasheet http://www.datasheet4u.com/

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共有リンク

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部品番号部品説明メーカ
UPA677TB

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC
NEC
UPA677TB

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Renesas
Renesas


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