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PDF SEMIX653GAL176HDS Data sheet ( 特性 )

部品番号 SEMIX653GAL176HDS
部品説明 Trench IGBT Modules
メーカ Semikron
ロゴ Semikron ロゴ 

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SEMIX653GAL176HDS Datasheet, SEMIX653GAL176HDS PDF,ピン配置, 機能
SEMiX653GAL176HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX653GAL176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 150 °C
ICRM = 2xICnom
VCC = 1000 V
VGE 20 V
VCES 1700 V
Tc = 25 °C
Tc = 80 °C
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 450 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 18 mA
VGE = 0 V
VCE = 1700 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1700
619
438
450
900
-20 ... 20
10
-55 ... 150
545
365
450
900
2900
-40 ... 150
545
365
450
900
2900
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
5.2
typ.
2
2.45
1
0.9
2.2
3.4
5.8
0.1
39.6
1.65
1.31
4200
1.67
max. Unit
2.45
2.9
1.2
1.1
2.8
4.0
6.4
0.3
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
GAL
© by SEMIKRON
Rev. 12 – 16.12.2009
1
Free Datasheet http://www.datasheet4u.com/

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