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Número de pieza | IXTY08N100D2 | |
Descripción | Depletion Mode MOSFET | |
Fabricantes | IXYS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXTY08N100D2 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Depletion Mode
MOSFET
N-Channel
Preliminary Technical Information
IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
VDSX
ID(on)
=
>
≤RDS(on)
1000V
800mA
21Ω
TO-252 (IXTY)
Symbol
VDSX
VGSX
VGSM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
1000
V
±20 V
±30 V
60 W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300 °C
260 °C
1.13 / 10
Nm/lb.in.
0.35 g
2.50 g
3.00 g
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 25μA
VGS(off)
VDS = 25V, ID = 25μA
IGSX VGS = ±20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
TJ = 125°C
RDS(on)
VGS = 0V, ID = 400mA, Note 1
ID(on)
VGS = 0V, VDS = 50V, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
- 2.0
- 4.0 V
±50 nA
1 μA
15 μA
21 Ω
800 mA
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
© 2009 IXYS CORPORATION, All Rights Reserved
DS100182A(12/09)
Free Datasheet http://www.datasheet4u.com/
1 page IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Fig. 13. Capacitance
1,000
Ciss
100
Coss
10
f = 1 MHz
1
0 5 10
15 20 25
VDS - Volts
Crss
30 35
Fig. 15. Forward-Bias Safe Operating Area
10.00
@ TC = 25ºC
40
5
4 VDS = 500V
I D = 400mA
3 I G = 1mA
2
1
0
-1
-2
-3
-4
-5
024
Fig. 14. Gate Charge
6 8 10
QG - NanoCoulombs
12
14
Fig. 16. Forward-Bias Safe Operating Area
10.00
@ TC = 75ºC
16
1.00
RDS(on) Limit
0.10
0.01
10
TJ = 150ºC
TC = 25ºC
Single Pulse
10.0
100
VDS - Volts
25µs
100µs
1.00
RDS(on) Limit
1ms
10ms
100ms
DC
1,000
0.10
0.01
10
TJ = 150ºC
TC = 75ºC
Single Pulse
Fig. 17. Maximum Transient Thermal Impedance
100
VDS - Volts
25µs
100µs
1ms
10ms
100ms
DC
1,000
1.0
0.1
0.0001
0.001
© 2009 IXYS CORPORATION, All Rights Reserved
0.01 0.1
Pulse Width - Seconds
1 10
IXYS REF: T_08N100D2(1C)8-25-09
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXTY08N100D2.PDF ] |
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IXTY08N100D2 | Depletion Mode MOSFET | IXYS |
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