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IXTK200N10L2 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTK200N10L2
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTK200N10L2 Datasheet, IXTK200N10L2 PDF,ピン配置, 機能
Advance Technical Information
Linear L2TM Power
MOSFET w/ Extended
FBSOA
IXTK200N10L2
IXTX200N10L2
VDSS
ID25
RDS(on)
= 100V
= 200A
< 11mΩ
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
TO-264 (IXTK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
Lead Current Limit, (RMS)
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.063 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (IXTK)
Mounting Force (IXTX)
TO-264
PLUS247
Maximum Ratings
100
100
V
V
±20 V
±30 V
200 A
160 A
500 A
100 A
5J
1040
W
-55...+150
150
-55...+150
°C
°C
°C
300 °C
260
1.13/10
20..120 / 4.5..27
°C
Nm/lb.in.
N/lb.
10 g
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 3mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
100 V
2.0 4.5 V
±200 nA
10 μA
250 μA
11 mΩ
G DS
Tab
PLUS247(IXTX)
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Designed for Linear Operation
z Avalanche Rated
z Guaranteed FBSOA at 75°C
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Solid State Circuit Breakers
z Soft Start Controls
z Linear Amplifiers
z Programmable Loads
z Current Regulators
© 2010 IXYS CORPORATION, All Rights Reserved
DS100239(2/10)
Free Datasheet http://www.datasheet4u.com/

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