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PDF IXTK90P20P Data sheet ( Hoja de datos )
| Número de pieza | IXTK90P20P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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PolarPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTK90P20P
IXTX90P20P
VDSS =
ID25 =
≤RDS(on)
- 200V
- 90A
44mΩ
TO-264 (IXTK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force (PLUS247)
Mounting Torque (TO-264)
PLUS247
TO-264
Maximum Ratings
- 200
- 200
V
V
±20
±30
- 90
- 270
- 90
3.5
V
V
A
A
A
J
10 V/ns
890 W
-55 ... +150
150
-55 ... +150
300
260
20..120 / 4.5..27
1.13 / 10
6
10
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = -1mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS , VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
- 200
V
- 2.0
- 4.0 V
±100 nA
- 50 μA
- 250 μA
44 mΩ
© 2013 IXYS CORPORATION, All Rights Reserved
G
D
S
PLUS247 (IXTX)
Tab
G
DS
G = Gate
S = Source
Tab
D = Drain
Tab = Drain
Features
z International Standard Packages
z Rugged PolarPTM Process
z Avalanche Rated
z Fast Intrinsic Diode
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switches
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
DS99933C(01/13)
Free Datasheet http://www.datasheet4u.com/
1 page  
1
0.1
0.01
0.001
0.00001
0.0001
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
Pulse Width - Seconds
IXTK90P20P
IXTX90P20P
1 10
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_90P20P(B9)03-25-09-D
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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