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IXTT30N60L2 の電気的特性と機能

IXTT30N60L2のメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTT30N60L2
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTT30N60L2 Datasheet, IXTT30N60L2 PDF,ピン配置, 機能
Preliminary Technical Information
Linear L2TM Power
MOSFET with extended
FBSOA
IXTH30N60L2
IXTQ30N60L2
IXTT30N60L2
VDSS = 600V
ID25 = 30A
RDS(on) 240mΩ
N-Channel Enhancement Mode
Avalanche rated
TO-247
Symbol
VDSS
V
DGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
T
J
TJM
Tstg
T
L
T
SOLD
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C,
R
GS
=
1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.063in) from case for 10s
Plastic body for 10s
Mounting torque (TO-247&TO-3P)
TO-247
TO-3P
TO-268
Maximum Ratings
600
600
V
V
±20 V
±30 V
30 A
80 A
30 A
2J
540 W
-55 to +150
+150
-55 to +150
°C
°C
°C
300 °C
260 °C
1.13/10
Nm/lb.in.
6.0 g
5.5 g
4.0 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
I
DSS
R
DS(on)
V =V
DS DSS
VGS = 0V
TJ = 125°C
V = 10V, I = 0.5 I , Note 1
GS D D25
Characteristic Values
Min. Typ. Max.
600 V
2.5 4.5 V
±100 nA
50 μA
300 μA
240 mΩ
TO-3P
(TAB)
G
DS
TO-268
(TAB)
GS
(TAB)
G = Gate
D = Drain
S = Source TAB = Drain
Features
z Designed for linear operation
z International standard packages
z Avalanche rated
z Molding epoxies meet UL 94 V-0
flammability classification
z Guaranteed FBSOA at 75°C
Applications
z Solid state circuit breakers
z Soft start controls
z Linear amplifiers
z Programmable loads
z Current regulators
© 2009 IXYS CORPORATION, All rights reserved
DS100101(01/09)
Free Datasheet http://www.datasheet4u.com/

1 Page





IXTT30N60L2 pdf, ピン配列
30
27
24
21
18
15
12
9
6
3
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 20V
14V
12V
10V
9V
8V
7V
6V
5V
123456
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
30
VGS = 20V
27 12V
10V
24 9V
21 8V
18
15 7V
12
9
6V
6
3 5V
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VDS - Volts
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
Fig. 5. RDS(on) Normalized to ID = 15A Value
vs. Drain Current
VGS = 10V
TJ = 125ºC
TJ = 25ºC
10 20 30 40 50 60 70 80
ID - Amperes
© 2009 IXYS CORPORATION, All rights reserved
IXTH30N60L2 IXTQ30N60L2
IXTT30N60L2
80
70
60
50
40
30
20
10
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGS = 20V
14V
12V
10V
9V
8V
7V
6V
5 10 15 20 25
VDS - Volts
30
Fig. 4. RDS(on) Normalized to ID = 15A Value
vs. Junction Temperature
2.8
2.6 VGS = 10V
2.4
2.2
2.0 I D = 30A
1.8 I D = 15A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
35
30
25
20
15
10
5
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
IXYS REF: T_30N60L2(8R)01-20-09-A
Free Datasheet http://www.datasheet4u.com/


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部品番号部品説明メーカ
IXTT30N60L2

Power MOSFET ( Transistor )

IXYS
IXYS


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