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IXTI76N25T PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTI76N25T
部品説明 Power MOSFETs
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTI76N25T Datasheet, IXTI76N25T PDF,ピン配置, 機能
Preliminary Technical Information
Trench Gate
Power MOSFET
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T
IXTQ76N25T
N-Channel Enhancement Mode
VDSS =
ID25 =
RDS(on)
250V
76A
39mΩ
Typical avalanche BV = 300V
TO-263 (IXTA)
TO-247 (IXTH)
TO-262 (IXTI)
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAS
EAS
PD
TJ
TJM
Tstg
TL
FMCd
Weight
GS
(TAB)
G
DS
(TAB)
G
D
S
(TAB)
GDS
(TAB)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
250 V
250 V TO-3P (IXTQ)
Transient
*TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
± 30 V
76 A
170 A
8A
1.5 J
G
DS
(TAB)
TC = 25°C
460
-55 ... +150
150
-55 ... +150
1.6mm (0.062in.) from case for 10s
Plastic body for 10seconds
300
260
Mounting Torque TO-220,TO-3P,TO247
1.13 / 10
Mounting Force TO-262,TO-263
10..65 / 2.2..14.6
TO-262,TO-263
TO-220
TO-3P
TO-247
2.5
3.0
5.5
6.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Avalanche rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS = 0V, ID = 10A
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ . Max.
250
300
V
3 5V
± 100 nA
2 μA
200 μA
39 mΩ
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
z Uninterruptible power supplies
z High speed power switching
applications
© 2007 IXYS CORPORATION, All rights reserved
DS99663C(10/07)
Free Datasheet http://www.datasheet4u.com/

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