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Número de pieza | IXTI76N25T | |
Descripción | Power MOSFETs | |
Fabricantes | IXYS | |
Logotipo | ||
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No Preview Available ! Preliminary Technical Information
Trench Gate
Power MOSFET
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T
IXTQ76N25T
N-Channel Enhancement Mode
VDSS =
ID25 =
RDS(on) ≤
250V
76A
39mΩ
Typical avalanche BV = 300V
TO-263 (IXTA)
TO-247 (IXTH)
TO-262 (IXTI)
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAS
EAS
PD
TJ
TJM
Tstg
TL
FMCd
Weight
GS
(TAB)
G
DS
(TAB)
G
D
S
(TAB)
GDS
(TAB)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
250 V
250 V TO-3P (IXTQ)
Transient
*TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
± 30 V
76 A
170 A
8A
1.5 J
G
DS
(TAB)
TC = 25°C
460
-55 ... +150
150
-55 ... +150
1.6mm (0.062in.) from case for 10s
Plastic body for 10seconds
300
260
Mounting Torque TO-220,TO-3P,TO247
1.13 / 10
Mounting Force TO-262,TO-263
10..65 / 2.2..14.6
TO-262,TO-263
TO-220
TO-3P
TO-247
2.5
3.0
5.5
6.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Avalanche rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS = 0V, ID = 10A
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ . Max.
250
300
V
3 5V
± 100 nA
2 μA
200 μA
39 mΩ
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
z Uninterruptible power supplies
z High speed power switching
applications
© 2007 IXYS CORPORATION, All rights reserved
DS99663C(10/07)
Free Datasheet http://www.datasheet4u.com/
1 page IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
140
120
100
80
60
40
20
0
3.5
Fig. 7. Input Admittance
TJ = 125ºC
25ºC
- 40ºC
4.0 4.5 5.0 5.5 6.0 6.5
VGS - Volts
7.0
200
180
160
140
120
100
80
60
40
20
0
0.4
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
TJ = 125ºC
TJ = 25ºC
0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD - Volts
1.2
10,000
1,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
Coss
100
10
0
Crss
5 10 15 20 25 30 35 40
VDS - Volts
120
110
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 8. Transconductance
TJ = - 40ºC
25ºC
125ºC
20 40 60 80 100 120 140 160 180
ID - Amperes
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
0
VDS = 125V
I D = 25A
I G = 10mA
10 20
30 40 50 60
QG - NanoCoulombs
70
80
90 100
Fig. 12. Maximum Transient Thermal
Im pedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
© 2007 IXYS CORPORATION, All rights reserved
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet IXTI76N25T.PDF ] |
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