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IXTA76N25T の電気的特性と機能

IXTA76N25TのメーカーはIXYSです、この部品の機能は「Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTA76N25T
部品説明 Power MOSFETs
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTA76N25T Datasheet, IXTA76N25T PDF,ピン配置, 機能
Preliminary Technical Information
Trench Gate
Power MOSFET
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T
IXTQ76N25T
N-Channel Enhancement Mode
VDSS =
ID25 =
RDS(on)
250V
76A
39mΩ
Typical avalanche BV = 300V
TO-263 (IXTA)
TO-247 (IXTH)
TO-262 (IXTI)
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAS
EAS
PD
TJ
TJM
Tstg
TL
FMCd
Weight
GS
(TAB)
G
DS
(TAB)
G
D
S
(TAB)
GDS
(TAB)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
250 V
250 V TO-3P (IXTQ)
Transient
*TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
± 30 V
76 A
170 A
8A
1.5 J
G
DS
(TAB)
TC = 25°C
460
-55 ... +150
150
-55 ... +150
1.6mm (0.062in.) from case for 10s
Plastic body for 10seconds
300
260
Mounting Torque TO-220,TO-3P,TO247
1.13 / 10
Mounting Force TO-262,TO-263
10..65 / 2.2..14.6
TO-262,TO-263
TO-220
TO-3P
TO-247
2.5
3.0
5.5
6.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Avalanche rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS = 0V, ID = 10A
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ . Max.
250
300
V
3 5V
± 100 nA
2 μA
200 μA
39 mΩ
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
z Uninterruptible power supplies
z High speed power switching
applications
© 2007 IXYS CORPORATION, All rights reserved
DS99663C(10/07)
Free Datasheet http://www.datasheet4u.com/

1 Page





IXTA76N25T pdf, ピン配列
TO-263 (IXTA) Outline
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
TO-220 (IXTP) Outline
TO-247 (IXTH) Outline
123
P
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Leaded 262 (IXTI) Outline
Pins: 1 - Gate
2 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P (IXTQ) Outline
© 2007 IXYS CORPORATION, All rights reserved
Free Datasheet http://www.datasheet4u.com/


3Pages


IXTA76N25T 電子部品, 半導体
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
34
32
30
28
26
24
22
20
18
16
14
12
10
25
I D = 38A
I D = 76A
RG = 3.3Ω
VGS = 15V
VDS = 125V
35 45 55 65 75 85 95 105 115 125
T J - Degrees Centigrade
ID =
38A
30
28
26
24
22
20
18
16
14
12
10
3
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
t r td(on) - - - -
TJ = 125ºC, VGS = 15V
VDS = 125V
I D = 38A
25
24
23
22
I D = 76A
21
20
4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
30
TJ = 25ºC
28
70
67
26 TJ = 125ºC
24
22 TJ = 25ºC
20
18
t f td(off) - - - -
RG = 3.3Ω, VGS = 15V
VDS = 125V
64
61
58
55
52
16 TJ = 125ºC
14
49
46
12 43
15 20 25 30 35 40 45 50 55 60 65 70 75 80
ID - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
34
32
30 TJ = 25ºC
28
26
24
22 RG = 3.3Ω
20 VGS = 15V
18 VDS = 125V
16
14
12 TJ = 125ºC
10
8
15 20 25 30 35 40 45 50 55 60 65 70 75 80
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
30 65
28
I D = 38A
62
26 59
24 56
22
I D = 76A
53
20
t f td(off) - - - -
50
18
RG = 3.3Ω, VGS = 15V
47
VDS = 125V
16 44
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
80
t f td(off) - - - -
70 TJ = 125ºC, VGS = 15V
VDS = 125V
60
190
170
150
50
I D = 38A, 76A
40
130
110
30 90
20 70
10 50
3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
IXYS REF: T_76N25T(6E)06-28-06
Free Datasheet http://www.datasheet4u.com/

6 Page



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部品番号部品説明メーカ
IXTA76N25T

Power MOSFETs

IXYS
IXYS


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