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PDF IXTA76P10T Data sheet ( Hoja de datos )
| Número de pieza | IXTA76P10T | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS | |
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TrenchPTM
Power MOSFETs
IXTA76P10T
IXTP76P10T
IXTH76P10T
VDSS =
ID25 =
≤RDS(on)
- 100V
- 76A
25mΩ
P-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
D
G
S
Maximum Ratings
- 100
- 100
V
V
±15 V
±25 V
- 76
- 230
A
A
- 38 A
1J
298 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13 /10
°C
°C
Nm/lb.in.
2.5 g
3.0 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.0
- 4.0 V
±100 nA
- 15 μA
- 750 μA
25 mΩ
© 2013 IXYS CORPORATION, All Rights Reserved
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
TO-247 (IXTH)
D (Tab)
G DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
DS100024B(01/13)
Free Datasheet http://www.datasheet4u.com/
1 page  
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
44
40 RG = 1Ω, VGS = -10V
VDS = - 50V
36
32 I D = - 38A
28
I D = - 76A
24
20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
200
t r td(on) - - - -
160 TJ = 125ºC, VGS = -10V
VDS = - 50V
I D = - 76A, - 38A
120
110
90
70
80 50
40 30
0 10
0 2 4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
24 66
23
t f td(off) - - - -
62
RG = 1Ω, VGS = -10V
22
VDS = - 50V
58
21 54
20 50
19
TJ = 125ºC, 25ºC
18
46
42
17 38
16 34
-36 -40 -44 -48 -52 -56 -60 -64 -68 -72 -76
ID - Amperes
IXTA76P10T IXTP76P10T
IXTH76P10T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
44
40
36
RG = 1Ω, VGS = -10V
32 VDS = - 50V
TJ = 25ºC
28
TJ = 125ºC
24
20
-36 -40 -44 -48 -52 -56 -60 -64 -68 -72 -76
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
24
23 t f td(off) - - - -
RG = 1Ω, VGS = -10V
22 VDS = - 50V
21
75
70
65
60
20
I D = - 38A
55
19 50
18
I D = - 76A
45
17 40
16 35
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
200
t f td(off) - - - -
160 TJ = 125ºC, VGS = -10V
VDS = - 50V
I D = - 38A, - 76A
120
300
240
180
80 120
40 60
00
0 2 4 6 8 10 12 14 16 18 20
RG - Ohms
© 2013 IXYS CORPORATION, All Rights Reserved
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTA76P10T.PDF ] | |
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