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PDF IXST24N60BD1 Data sheet ( Hoja de datos )
| Número de pieza | IXST24N60BD1 | |
| Descripción | High Speed IGBT | |
| Fabricantes | IXYS | |
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High Speed IGBT
Short Circuit SOA Capability
IXSH 24N60B
IXST 24N60B
IXSH 24N60BD1
IXST 24N60BD1
VCES
IC25
V
CE(sat)
tfi typ
= 600 V
= 48 A
= 2.5 V
= 170 ns
Symbol
Test Conditions
VCES
VCGR
V
GES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
PC
T
J
TJM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
V=
GE
15
V,
T
J
=
125°C,
R
G
=
33
Ω
Clamped inductive load, VCC= 0.8 VCES
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 Ω, non repetitive
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
(D1)
Maximum Ratings
600
600
±20
±30
48
24
96
I = 48
CM
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
µs
150 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
Symbol
BVCES
V
GE(th)
ICES
I
GES
V
CE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VGE = 0 V
I = 1.5 mA, V = V
C CE GE
VCE = 0.8 • VCES
TJ = 25°C
VGE = 0 V
TJ = 125°C
V
CE
=
0
V,
V
GE
=
±20
V
I = I , V = 15 V
C C90 GE
600
3.5
24N60B
24N60BD1
24N60B
24N60BD1
V
6.5 V
25 µA
200 µA
1 mA
2 mA
±100 nA
2.5 V
TO-247 AD (IXSH)
G
C
E
TO-268 (D3) ( IXST)
(TAB)
G
E
(TAB)
G = Gate
E = Emitter
TAB = Collector
Features
z International standard packages
z Guaranteed Short Circuit SOA
capability
z Low VCE(sat)
- for low on-state conduction losses
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Fast Fall Time for switching speeds
up to 50 kHz
Applications
z AC and DC motor speed control
z Uninterruptible power supplies (UPS)
z Welding
Advantages
z Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
z High power density
© 2003 IXYS All rights reserved
DS98768B(02/03)
Free Datasheet http://www.datasheet4u.com/
1 page | ||
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