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PDF IXD611 Data sheet ( Hoja de datos )
| Número de pieza | IXD611 | |
| Descripción | High & Low-side Driver | |
| Fabricantes | IXYS | |
| Logotipo |  |
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IXD611
600V, 600 mA High & Low-side Driver
for N-Channel MOSFETs and IGBTs
IXD611
Features
General Description
• Floating High Side Driver with boot-strap Power
supply along with a Low Side Driver.
• Fully operational to 600V
• ± 50V/ns dV/dt immunity
• Gate drive power supply range: 10 - 35V
• Undervoltage lockout for both output drivers
• Outputs are in phase with inputs
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up protected over entire
operating range
• High peak output current: ± 600 mA
• Matched propagation delay for both outputs
• Low output impedance
• Low power supply current
• Immune to negative voltage transients
The IXD611, with its two inputs referenced to ground, has high
speed low side and high side gate ouptuts to drive either a pair
of N-channel MOSFETs or IGBTs in a half-bridge totem pole
configuration. The High Side driver can control a MOSFET or
IGBT connected to a positive high voltage up to 600V. The logic
input stages are compatible with TTL or CMOS, have built-in
hysteresis and are fully immune to latch up over the entire
operating range. The IXD611 can withstand dV/dt on the output
side up to ± 50V/ns.
The IXD611 comes in either the 8-PIN PDIP (IXD611P1), 8-PIN
SOIC (IXD611S1), 14-PIN PDIP (IXD611P7), or the 14-PIN
SOIC (IXD611S7) packages.
Ordering Information
Part Number Package Type
Applications
• Driving MOSFETs and IGBTs in half-bridge circuits
• High voltage, high side and low side drivers
• Motor Controls
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Class D Switching Amplifiers
IXD611P1
IXD611P7
IXD611S1
IXD611S7
8-PIN DIP
14-PIN DIP
8-PIN SOIC
14-PIN SOIC
Warning: The IXD611 is ESD sensitive.
Figure 1A. Typical Circuit for IXD611P7/S7
Up to 600V
Figure 1B. Typical Circuit for IXD611P1/S1
Up to 600V
HGO
VCC VCL VCH
HIN HIN HS
LIN LIN
LS
GND DG LGO
To Load
VCC
HIN
LIN
GND
HGO
VCL VCH
HIN HS
LIN
LS LGO
To Load
© 2007 IXYS CORPORATION All rights reserved
1
First Release
DS99198A(10/07)
Free Datasheet http://www.datasheet4u.com/
1 page  
Dynamic Electrical Characteristics
Symbol
ton
toff
tr
t
f
tdm
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Delay matching, HS & LS turn-on/off
Test Conditions
VCL= VCH = 15V, CLOAD= 1nF
VCL= VCH = 15V, CLOAD= 1nF
VCL= VCH = 15V, CLOAD= 1nF
V = V = 15V, C = 1nF
CL CH
LOAD
CLOAD= 1nF
IXD611
Min Typ Max Units
180 200
ns
170 190
ns
28 35 ns
18 25 ns
10 20 ns
Static Electrical Characteristics
Symbol Definition
Test Conditions
Min
VINH Logic “1” input voltage
VCL = VCH= 15V
2.7
VINL Logic “0” input voltage
VCL= VCH = 15V
VHLGO // VHHGO High level output voltage,
VCH-VHGO or VCL-VLGO
VLLGO // VLHGO Low level output voltage,
VHGO or VLGO
IO = 20mA
IO = 20mA
I HS to LS bias current.
HL
V = 600V
HS
IQHS
Quiescent VCH supply current
VCH= 15V VIN= 0V or VIN = 5 V
I
Quiescent V supply current
V = 15V V = 0V or V = 5 V
QLS
CL
CL IN
IN
IIN+ Logic “1” input bias current
VIN = VSUPPLY = 15V
IIN- Logic “0” input bias current VIN = 0V
VCHUV+
VCH supply undervoltage positive going threshold.
7.5
VCHUV-
VCH supply undervoltage negative going threshold.
7
VCLUV+
VCL supply undervoltage positive going threshold
7.5
VCLUV-
VCL supply undervoltage negative going threshold.
7
VCHUVH, VCLUVH Undervoltage Hysteresis
0.3
IGO+ HS or LS Output high short circuit current; VGO= 15V, VIN= 5V, PW<10us 0.5
I - HS or LS Output low short circuit current; V = 15V, V = 0V, PW<10us
GO GO IN
Precaution : When performing the high voltage tests, adequate safety precautions should be taken.
Typ Max Units
V
2.4 V
0.22 0.3
V
0.16 0.25
V
0.12
0.7
0.18
11
1
8
7.3
8
7.5
0.6
0.6
-0.6
0.2
0.8
0.3
20
2
8.5
8
8.5
8
-0.5
mA
mA
mA
uA
uA
V
V
V
V
V
A
A
© 2007 IXYS CORPORATION All rights reserved
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
IXD611
Fig. 23
Low Level Output Voltage vs. Supply Voltage
Io = 20mA
200
Fig. 24
High Level Ouput Voltage vs. Supply Voltage
Io = 20mA
300
180
160
Low Side
140
120
High Side
100
250
Low Side
200
High Side
150
80
100
60
40 50
20
0
0
Fig. 25
5 10 15 20 25 30 35
Supply Voltage (V)
Output Source Current vs. Supply Voltage
2
0
0
Fig. 26
0
5 10 15 20 25 30 35
Supply Voltage (V)
Output Sink Current vs. Supply Voltage
1.8 -0.2
1.6
-0.4
1.4
-0.6
1.2
1 -0.8
0.8
0.6
0.4
0.2
0
0 5 10 15 20 25 30 35 40
Fig. 27
Supply Voltage (V)
Output Source Current vs. Temperature
VSUPPLY = 15V
0.9
-1
-1.2
-1.4
-1.6
0
5 10 15 20 25 30 35
Supply Voltage (V)
Fig. 28
0
Output Sink Current vs. Temeprature
VSUPPLY = 15V
40
0.8 -0.1
0.7 -0.2
0.6 -0.3
0.5 -0.4
0.4 -0.5
0.3 -0.6
0.2 -0.7
0.1 -0.8
0
-50
0
50 100
Temperature (C)
© 2007 IXYS CORPORATION All rights reserved
-0.9
150 -50
11
0 50 100
Temperature (C)
150
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
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| PDF Descargar | [ Datasheet IXD611.PDF ] | |
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