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PDF IXTP32P05T Data sheet ( Hoja de datos )
| Número de pieza | IXTP32P05T | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IXTP32P05T (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TrenchPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTY32P05T
IXTA32P05T
IXTP32P05T
D
G
S
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
- 50
- 50
V
V
±15 V
±25 V
- 32
-110
A
A
- 32 A
200 mJ
83 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
0.35 g
2.50 g
3.00 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
- 50 V
- 2.5
- 4.5 V
±50 nA
- 3 μA
-100 μA
39 mΩ
© 2013 IXYS CORPORATION, All Rights Reserved
VDSS =
ID25 =
≤RDS(on)
- 50V
- 32A
39mΩ
TO-252 (IXTY)
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
DS99967C(01/13)
Free Datasheet http://www.datasheet4u.com/
1 page  
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
30
29 RG = 10Ω , VGS = -10V
VDS = - 30V
28
27
26 I D = -16A
25
24 I D = - 32A
23
22
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
90
80 t r
td(on) - - - -
TJ = 125ºC, VGS = -10V
70 VDS = - 30V
60
36
34
32
30
50
40 I D = -16A, - 32A
28
26
30 24
20 22
10 20
0 18
10 12 14 16 18 20 22 24 26 28 30 32 34
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
27.5 50
27.0 t f td(off) - - - -
RG = 10Ω, VGS = -10V
26.5 VDS = - 30V
45
40
26.0 35
25.5 30
25.0
TJ = 25ºC, 125ºC
24.5
25
20
24.0 15
-16 -18 -20 -22 -24 -26 -28 -30 -32
ID - Amperes
IXTY32P05T IXTA32P05T
IXTP32P05T
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
29
28
TJ = 25ºC
27 RG = 10Ω , VGS = -10V
VDS = - 30V
26
25
24 TJ = 125ºC
23
-16 -18 -20 -22 -24 -26 -28 -30 -32
ID - Amperes
28.0
27.5
27.0
26.5
26.0
25.5
25.0
24.5
24.0
23.5
25
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
52
t f td(off) - - - -
RG = 10Ω, VGS = -10V
VDS = - 30V
I D = -16A
48
44
40
36
32
I D = -16A, - 32A
28
24
20
16
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
80
70 t f
td(off) - - - -
TJ = 125ºC, VGS = -10V
60 VDS = - 30V
80
70
60
50 50
40
I D = - 32A
30
20
I D = -16A
40
30
20
10 10
10 12 14 16 18 20 22 24 26 28 30 32 34
RG - Ohms
© 2013 IXYS CORPORATION, All Rights Reserved
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTP32P05T.PDF ] | |
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