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HIP6603 の電気的特性と機能

HIP6603のメーカーはIntersil Corporationです、この部品の機能は「Synchronous-Rectified Buck MOSFET Drivers」です。


製品の詳細 ( Datasheet PDF )

部品番号 HIP6603
部品説明 Synchronous-Rectified Buck MOSFET Drivers
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HIP6603 Datasheet, HIP6603 PDF,ピン配置, 機能
Data Sheet
HIP6601, HIP6603
January 2000
File Number 4819
Synchronous-Rectified Buck MOSFET
Drivers
The HIP6601 and HIP6603 are high frequency, dual
MOSFET drivers specifically designed to drive two power
N-Channel MOSFETs in a synchronous-rectified buck
converter topology. These drivers combined with a HIP630x
Multi-Phase Buck PWM controller and Intersil UltraFETs™
form a complete core-voltage regulator solution for
advanced microprocessors.
The HIP6601 drives the lower gate in a synchronous-rectifier
bridge to 12V, while the upper gate can be independently
driven over a range from 5V to 12V. The HIP6603 drives
both upper and lower gates over a range of 5V to 12V. This
drive-voltage flexibility provides the advantage of optimizing
applications involving trade-offs between switching losses
and conduction losses.
The output drivers in the HIP6601 and HIP6603 have the
capacity to efficiently switch power MOSFETs at frequencies
up to 2MHz. Each driver is capable of driving a 3000pF load
with a 30ns propagation delay and 50ns transition time. Both
products implement bootstrapping on the upper gate with
only an external capacitor required. This reduces
implementation complexity and allows the use of higher
performance, cost effective, N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
Ordering Information
TEMP. RANGE
PART NUMBER (oC) PACKAGE PKG. NO.
HIP6601CB
0 to 85
8 Ld SOIC M8.15
HIP6603CB
0 to 85
8 Ld SOIC M8.15
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 Lead SOIC Package
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Bridge Shutdown
• Supply Under Voltage Protection
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD®
Athlon™ Microprocessors
• High Frequency Low Profile DC-DC Converters
• High Current Low Voltage DC-DC Converters
Pinout
HIP6601CB/HIP6603CB
(SOIC)
TOP VIEW
UGATE 1
BOOT 2
PWM 3
GND 4
8 PHASE
7 PVCC
6 VCC
5 LGATE
Block Diagram
PVCC
BOOT
VCC
+5V
PWM
10K
CONTROL
LOGIC
10K
SHOOT-
THROUGH
PROTECTION
UGATE
PHASE
VCC FOR HIP6601
PVCC FOR HIP6603
LGATE
GND
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
Pentium® is a registered trademark of Intel Corporation. AMD® is a registered trademark of Advanced Micro Devices, Inc.

1 Page





HIP6603 pdf, ピン配列
HIP6601, HIP6603
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (VBOOT - VPHASE). . . . . . . . . . . . . . . . . . . . . . . .15V
Input Voltage (VPWM) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V
UGATE . . . . . . . . . . . . . . . . . . . . . . VPHASE - 0.3V to VBOOT + 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to VPVCC + 0.3V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7) . . . . .3kV
Machine Model (Per EIAJ ED-4701 Method C-111). . . . . . . .200V
Thermal Information
Thermal Resistance
θJA (oC/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
113
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC
(SOIC - Lead Tips Only)
Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . 0oC to 85oC
Maximum Operating Junction Temperature . . . . . . . . . . . . . . 125oC
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V ±10%
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . . . . . . 5V to 12V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER
SYMBOL
TEST CONDITIONS
VCC SUPPLY CURRENT
Bias Supply Current
Power Supply Current
POWER-ON RESET
IVCC
IPVCC
HIP6601, fPWM = 1MHz, VPVCC = 12V
HIP6603, fPWM = 1MHz, VPVCC = 12V
HIP6601, fPWM = 1MHz, VPVCC = 12V
HIP6603, fPWM = 1MHz, VPVCC = 12V
VCC Rising Threshold
VCC Falling Threshold
PWM INPUT
Input Current
PWM Rising Threshold
IPWM
VPWM = 0 or 5V (See Block Diagram)
PWM Falling Threshold
UGATE Rise Time
LGATE Rise Time
UGATE Fall Time
LGATE Fall Time
UGATE Turn-Off Propagation Delay
LGATE Turn-Off Propagation Delay
Shutdown Window
TRUGATE VPVCC = VVCC = 12V, 3nF load
TRLGATE VPVCC = VVCC = 12V, 3nF load
TFUGATE VPVCC = VVCC = 12V, 3nF load
TFLGATE VPVCC = VVCC = 12V, 3nF load
TPDLUGATE VVCC = VPVCC = 12V, 3nF load
TPDLLGATE VVCC = VPVCC = 12V, 3nF load
Shutdown Holdoff Time
OUTPUT
Upper Drive Source Impedance
Upper Drive Sink Impedance
Lower Drive Source Impedance
Lower Drive Sink Impedance
RUGATE
RUGATE
RLGATE
RLGATE
VVCC = 12V, VPVCC = 5V
VVCC = VPVCC = 12V
VVCC = 12V, VPVCC = 5V
VVCC = 12V, VPVCC = 12V
VVCC = 12V, VPVCC = 5V
VVCC = 12V, VPVCC = 12V
VVCC = VPVCC = 12V
MIN TYP MAX UNITS
- 4.4 6.2 mA
- 2.5 3.6 mA
-
200 430
µA
- 1.8 3.3 mA
9.7 9.9 10.0
9.0 9.1 9.2
V
V
- 500 -
3.6 3.7
-
- 1.3 1.4
- 20 -
- 50 -
- 20 -
- 20 -
- 30 -
- 20 -
1.5 - 3.6
- 230 -
µA
V
V
ns
ns
ns
ns
ns
ns
V
ns
- 2.5 3.0
- 7.0 7.5
- 2.3 2.8
- 1.0 1.3
- 4.5 5.0
- 9.0 9.5
- 1.5 2.9
3


3Pages


HIP6603 電子部品, 半導体
HIP6601, HIP6603
The bootstrap device conducts when the lower MOSFET or
it’s body diode conducts and pulls the PHASE node toward
GND. While the bootstrap device conducts, a current path is
formed that refreshes the bootstrap capacitor. Since the
upper gate is driving a MOSFET, the charge removed from
the bootstrap capacitor is equivalent to the total gate charge
of the MOSFET. Therefore, the refresh power required by the
bootstrap capacitor is equivalent to the power used to
charge the gate capacitance of the MOSFET.
PREFRESH
=
12--
fS
W
QL
O
S
S
V
P
V
C
C
=
12--
fSW
QU
V
U
where QLOSS is the total charge removed from the bootstrap
capacitor and provided to the upper gate load.
The 1.05 factor is a correction factor derived from the
following characterization. The base circuit for characterizing
the drivers for different loading profiles and frequencies is
provided. CU and CL are the upper and lower gate load
capacitors. Decoupling capacitors [0.15µF] are added to the
PVCC and VCC pins. The bootstrap capacitor value is
0.01µF.
In Figure 1, CU and CL values are the same and frequency
is varied from 50kHz to 2MHz. PVCC and VCC are tied
together to a +12V supply. Curves do exceed the 800mW
cutoff, but continuous operation above this point is not
recommended.
Figure 2 shows the dissipation in the driver with 3nF loading
on both gates and each individually. Note the higher upper
gate power dissipation which is due to the bootstrap device
refresh cycle. Again PVCC and VCC are tied together and to
a +12V supply.
Test Circuit
+5V OR +12V
+12V
0.15µF
PVCC
0.15µF
VCC
PWM
0.01µF
BOOT
UGATE
PHASE
2N7002
CU
LGATE
GND
2N7002
CL
100k
1000
PVCC = VCC = 12V
800
CU = CL = 3nF
600
400
200
0
CU = CL = 1nF
CU = CL = 2nF
CU = CL = 4nF
CU = CL = 5nF
500
1000
1500
FREQUENCY (kHz)
2000
FIGURE 1. POWER DISSIPATION vs FREQUENCY
1000
PVCC = VCC = 12V
800
CU = CL = 3nF
600
CU = 3nF
400
200
CL = 3nF
0
500
1000
1500
2000
FREQUENCY (kHz)
FIGURE 2. 3nF LOADING PROFILE
The impact of loading on power dissipation is shown in
Figure 3. Frequency is held constant while the gate
capacitors are varied from 1nF to 5nF. VCC and PVCC are
tied together and to a +12V supply. Figures 4 through 6
show the same characterization for the HIP6603 with a +5V
supply on PVCC and VCC tied to a +12V supply.
Since both upper and lower gate capacitance can vary,
Figure 7 shows dissipation curves versus lower gate
capacitance with upper gate capacitance held constant at
three different values. These curves apply only to the
HIP6601 due to power supply configuration.
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HIP6601

Synchronous-Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation
HIP6601A

Synchronous Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation
HIP6601B

(HIP6601B / HIP6603B / HIP6604B) Synchronous Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation
HIP6601CB

Synchronous-Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation


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