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HIP0061 の電気的特性と機能

HIP0061のメーカーはIntersil Corporationです、この部品の機能は「60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array」です。


製品の詳細 ( Datasheet PDF )

部品番号 HIP0061
部品説明 60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HIP0061 Datasheet, HIP0061 PDF,ピン配置, 機能
HIP0061
December 1997
60V, 3.5A, 3-Transistor Common Source
ESD Protected Power MOSFET Array
Features
Description
• Three 3.5A Power MOS N-Channel Transistors
• Output Voltage to 60V
• rDS(ON) . . . . . 0.225Max Per Transistor at VGS = 10V
• Pulsed Current . . . . . . . . . . . . . . . . 10A Each Transistor
• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor
• Grounded Tab Eliminates Heat Sink Isolation
Applications
The HIP0061 is a power MOSFET array that consists of
three matched N-Channel enhancement mode MOS transis-
tors connected in a common source configuration. The
advanced Harris PASIC2 process technology used in this
product utilizes efficient geometries that provides outstand-
ing device performance and ruggedness.
The HIP0061 is designed to integrate three power devices in
one chip thus providing board layout area and heat sink sav-
ings for applications such as Motor Controls, Lamps,
Solenoids and Resistive Loads.
• Automotive
• Appliance
• Industrial Control
• Robotics
• Relay, Solenoid, Lamp Drivers
Ordering Information
TEMP.
PART NUMBER RANGE (oC)
PACKAGE
HIP0061AS1
-40 to 125 7 Ld Staggered
Vertical SIP
PKG.
NO.
Z7.05C
Symbol
DRAIN1
2
DRAIN2
5
DRAIN3
7
GATE1
1
GATE2
3
GATE3
6
4
SOURCE, TAB
HIP0061AS2
-40 to 125 7 Ld Gullwing SIP Z7.05B
Pinouts
HIP0061AS1
(SIP - VERTICAL)
TOP VIEW
7 DRAIN3
6 GATE3
5 DRAIN2
4 SOURCE
3 GATE2
2 DRAIN1
1 GATE 1
TAB
TAB (SOURCE) INTERNALLY CONNECTED TO PIN 4
HIP0061AS2
(SIP - GULLWING)
TOP VIEW
7 DRAIN3
6 GATE3
5 DRAIN2
4 SOURCE
3 GATE2
2 DRAIN1
1 GATE 1
TAB
TAB (SOURCE) INTERNALLY CONNECTED TO PIN 4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 3982.3

1 Page





HIP0061 pdf, ピン配列
HIP0061
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETERS
SYMBOL
TEST CONDITIONS
Short-Circuit Input Capacitance,
Common Source
CISS
VDS = 25V, VGS = 0V
f = 1MHz
Short-Circuit Output Capacitance,
Common Source
COSS
Short-Circuit Reverse Transfer
Capacitance, Common Source
CRSS
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
Diode Forward Voltage (Note 5)
Reverse Recovery Time
NOTES:
VSD
trr
5. Pulse test: Pulse width 300µs, duty cycle 2%.
6. Independent of operating temperature.
TEST CONDITIONS
ISD = 2A, VGS = 0V
ISD = 2A, dISD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
- 142 - pF
- 107 - pF
- 24
- pF
MIN TYP MAX UNITS
- 0.9 1.1 V
- 50
- ns
10 10µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
100ms
DC
100µs
1ms
TC = 25oC
0.1 TJ = MAX RATED
1
10
VDS, DRAIN VOLTAGE (V)
100
FIGURE 1A. 25oC SAFE-OPERATING AREA CURVE
10
100µs
10µs
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
100ms
DC
1ms
0.1
1
TC = 105oC
TJ = MAX RATED
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 1B. 105oC SAFE-OPERATING AREA CURVE
10
10µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
TC = 125oC
TJ = MAX RATED
0.1
1
10ms
100ms
DC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100µs
1ms
100
FIGURE 1C. 125oC SAFE-OPERATING AREA CURVE
50
STARTING TJ = 25oC
10 STARTING TJ = 125oC
5
1
0.001
0.01
0.1
tAV , TIME IN AVALANCHE (ms)
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
1.0
3


3Pages


HIP0061 電子部品, 半導体
Test Circuits and Waveforms
HIP0061
VGS
0V
RGS
VDD
RL
VDS
DUT
FIGURE 14. RESISTIVE SWITCHING TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
VGS
10%
50%
PULSE WIDTH
10%
90%
50%
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
+
10V
BATTERY -
CURRENT
REGULATOR
0.2µF 25k
0.1µF
+VDS
SAME TYPE
AS DUT
0 IGS
DUT
FIGURE 16. GATE CHARGE TEST CIRCUIT
Qg
10V
Qgs
VG
Qgd
CHARGE
FIGURE 17. BASIC GATE CHARGE WAVEFORM
6

6 Page



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共有リンク

Link :


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HIP0061

60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array

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HIP0061AS1

60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array

Intersil Corporation
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