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IRF9204PBF の電気的特性と機能

IRF9204PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9204PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF9204PBF Datasheet, IRF9204PBF PDF,ピン配置, 機能
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
PD - 96277B
IRF9204PbF
G
G
G a te
HEXFET® Power MOSFET
D
VDSS = -40V
RDS(on) = 16mΩ
ID = -74A
S
D
S
D
G
TO-220AB
IRF9204PbF
D
D ra in
S
S o u rce
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
™Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Max.
-74
-53
-56
-300
143
0.95
± 20
270
502
See Fig.17a, 17b, 14, 15
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
jJunction-to-Case
iCase-to-Sink, Flat, Greased Surface
iJunction-to-Ambient
Typ.
–––
0.50
–––
Max.
1.05
–––
62
Units
°C/W
www.irf.com
1
05/23/11
Free Datasheet http://www.datasheet4u.com/

1 Page





IRF9204PBF pdf, ピン配列
IRF9204PbF
1000
100
10
TOP
BOTTOM
VGS
-15V
-10V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
60μs PULSE WIDTH
Tj = 25°C
1000
100
TOP
BOTTOM
VGS
-15V
-10V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
1
-2.5V
0.1
0.1 1 10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
1000
10
1
0.1
-2.5V
60μs PULSE WIDTH Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
60
100
10 TJ = 175°C
50
TJ = 25°C
40
30
TJ = 175°C
1
TJ
=
25°C
VDS
=
-25V
60μs PULSE WIDTH
0.1
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1000
100 TJ = 175°C
20
10 VDS = -5V
380μs PULSE WIDTH
0
0 20 40 60 80 100
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance Vs. Drain Current
1.6
ID = -37A
VGS = -10V
1.4
10
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, Source-to-Drain Voltage (V)
Fig 5. Typical Source-Drain Diode Forward Voltage
www.irf.com
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance Vs. Temperature
3
Free Datasheet http://www.datasheet4u.com/


3Pages


IRF9204PBF 電子部品, 半導体
IRF9204PbF
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
*VGS=10V
VDD
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 17a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 17b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2μF
.3μF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 18a. Gate Charge Test Circuit
VDS
VGS
RG
RD
D.U.T.
+-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 19a. Switching Time Test Circuit
6
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 18b. Gate Charge Waveform
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 19b. Switching Time Waveforms
www.irf.com
Free Datasheet http://www.datasheet4u.com/

6 Page



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部品番号部品説明メーカ
IRF9204PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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