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H4435SのメーカーはHi-Sincerity Mocroelectronicsです、この部品の機能は「P-Channel Enhancement-Mode MOSFET」です。 |
部品番号 | H4435S |
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部品説明 | P-Channel Enhancement-Mode MOSFET | ||
メーカ | Hi-Sincerity Mocroelectronics | ||
ロゴ | |||
このページの下部にプレビューとH4435Sダウンロード(pdfファイル)リンクがあります。 Total 5 pages
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200101)
Issued Date : 2008.01.12
Revised Date :2009.02.06
Page No. : 1/5
H4435S
P-Channel Enhancement-Mode MOSFET (-30V, -9.1A)
• 8-Lead Plastic SO-8
Package Code: S
Features
• RDS(on)=20mΩ@VGS=-10V, ID=-9.1A
• RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
H4435S Symbol & Pin Assignment
54
6 3 Pin 1 / 2 / 3: Source
Pin 4: Gate
7 2 Pin 5 / 6 / 7 / 8: Drain
81
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current (Continuous)
IDM Drain Current (Pulsed) *1
PD Total Power Dissipation @TA=25oC
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
-30
±20
-9.1
-50
2.5
-55 to +150
50
Units
V
V
A
A
W
°C
°C/W
H4435S
HSMC Product Specification
Free Datasheet http://www.datasheet4u.com/
1 Page HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200101)
Issued Date : 2008.01.12
Revised Date :2009.02.06
Page No. : 3/5
24
22 Ta=25℃
20
18
16
14
12
10
8
6
4
2
0
-10V
-5.0V
-3.0V
0 12 3
VDS,Drain-to-source Voltage(V)
Fig 1.Typical Output Characteristics
4
-10V
25 -5.0V
T a=150℃
20
-3.0V
15
10
5
0
0 12 3 45
VDS,Drain-to-source Voltage(V)
Fig 2.Typical Output Characteristics
6
25
22.5
ID=6.9A
T a=25℃
20
17.5
15
2 4 6 8 10
VGS,Gate-to-Source Voltage(V)
Fig 3.On-Resistance v.s.Gate Voltage
12
25
20
15 ID=9.1A
VGS=10V
10
5
0
-50 -25 0 25 50 75 100 125 150
Tj,Junction Temperature(℃)
Fig 4.NormalizedOn-Resistance
v.s.Junction Temperature
10
T j=150
T j=25℃
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD,Source-to-Drain Voltage(V)
Fig 5.Forward Characteristic of Reverse Diode
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
T j,Junction T emperature(℃)
Fig 6.Gate Threshold Voltage v.s.junction Temperature
H4435S
HSMC Product Specification
Free Datasheet http://www.datasheet4u.com/
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ H4435S データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
H4435S | P-Channel Enhancement-Mode MOSFET | Hi-Sincerity Mocroelectronics |