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H4435S PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H4435S
部品説明 P-Channel Enhancement-Mode MOSFET
メーカ Hi-Sincerity Mocroelectronics
ロゴ Hi-Sincerity Mocroelectronics ロゴ 

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H4435S Datasheet, H4435S PDF,ピン配置, 機能
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200101)
Issued Date : 2008.01.12
Revised Date :2009.02.06
Page No. : 1/5
H4435S
P-Channel Enhancement-Mode MOSFET (-30V, -9.1A)
8-Lead Plastic SO-8
Package Code: S
Features
RDS(on)=20mΩ@VGS=-10V, ID=-9.1A
RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
H4435S Symbol & Pin Assignment
54
6 3 Pin 1 / 2 / 3: Source
Pin 4: Gate
7 2 Pin 5 / 6 / 7 / 8: Drain
81
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current (Continuous)
IDM Drain Current (Pulsed) *1
PD Total Power Dissipation @TA=25oC
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
-30
±20
-9.1
-50
2.5
-55 to +150
50
Units
V
V
A
A
W
°C
°C/W
H4435S
HSMC Product Specification
Free Datasheet http://www.datasheet4u.com/

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H4435S

P-Channel Enhancement-Mode MOSFET

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics

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