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PDF AP1A003GMT-HF Data sheet ( Hoja de datos )

Número de pieza AP1A003GMT-HF
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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Advanced Power
Electronics Corp.
AP1A003GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
SO-8 Compatible with Heatsink
D
Low On-resistance
RoHS Compliant & Halogen-Free
G
S
Description
AP1A003 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID
30V
0.99mΩ
260A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V4
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
260
57
46
300
104
5
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
1.2
25
Unit
/W
/W
1
201311181
Free Datasheet http://www.datasheet4u.com/

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