DataSheet.es    


PDF NJVNJD35N04T4G Data sheet ( Hoja de datos )

Número de pieza NJVNJD35N04T4G
Descripción NPN Darlington Power Transistor
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de NJVNJD35N04T4G (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! NJVNJD35N04T4G Hoja de datos, Descripción, Manual

NJD35N04G,
NJVNJD35N04G,
NJVNJD35N04T4G
NPN Darlington Power
Transistor
This high voltage power Darlington has been specifically designed
for inductive applications such as Electronic Ignition, Switching
Regulators and Motor Control.
Features
Exceptional Safe Operating Area
High VCE; High Current Gain
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These are PbFree Devices*
Benefits
Reliable Performance at Higher Powers
Designed for Inductive Loads
Very Low Current Requirements
Applications
Internal Combustion Engine Ignition Control
Switching Regulators
Motor Controls
Light Ballast
Photo Flash
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Sustaining Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Voltage
Collector Current
Continuous
Peak
Base Current
Total Power Dissipation
@ TC = 25C
Derate above 25C
VCEO
VCBO
VCES
VEBO
IC
ICM
IB
PD
350 Vdc
700 Vdc
700 Vdc
5.0 Vdc
Adc
4.0
8.0
0.5 Adc
45 W
0.36 W/C
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
February, 2012 Rev. 5
1
http://onsemi.com
DARLINGTON
POWER TRANSISTORS
4 AMPERES
350 VOLTS
45 WATTS
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
YWW
NJD
35N04G
Y = Year
WW = Work Week
NJD35N04 = Device Code
G = PbFree Device
ORDERING INFORMATION
Device
Package
NJD35N04G
DPAK
(PbFree)
NJVNJD35N04G
DPAK
(PbFree)
NJD35N04T4G
DPAK
(PbFree)
NJVNJD35N04T4G DPAK
(PbFree)
Shipping
75 Units / Rail
75 Units / Rail
2,500 /
Tape & Reel
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NJD35N04/D
Free Datasheet http://www.datasheet4u.com/

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet NJVNJD35N04T4G.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
NJVNJD35N04T4GNPN Darlington Power TransistorON Semiconductor
ON Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar