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PDF NJVMJB44H11 Data sheet ( Hoja de datos )
| Número de pieza | NJVMJB44H11 | |
| Descripción | (NJVMJB44H11 / NJVMJB45H11) Complementary Power Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MJB44H11 (NPN),
NJVMJB44H11 (NPN),
MJB45H11 (PNP),
NJVMJB45H11 (PNP)
Complementary
Power Transistors
D2PAK for Surface Mount
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Symbol
VCEO
VEB
IC
Value
80
5
10
20
Unit
Vdc
Vdc
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
PD
PD
TJ, Tstg
50
0.4
2.0
0.016
−55 to 150
W
W/°C
W
W/°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5 °C/W
Thermal Resistance, Junction−to−Ambient RqJA
75 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 5
1
http://onsemi.com
SILICON POWER
TRANSISTORS
10 AMPERES,
80 VOLTS, 50 WATTS
MARKING
DIAGRAM
D2PAK
CASE 418B
STYLE 1
B4xH11G
AYWW
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
MJB44H11G
MJB44H11T4G
Package
D2PAK
(Pb−Free)
D2PAK
(Pb−Free)
Shipping†
50 Units/Rail
800/Tape & Reel
NJVMJB44H11T4G D2PAK 800/Tape & Reel
(Pb−Free)
MJB45H11G
D2PAK
(Pb−Free)
50 Units/Rail
MJB45H11T4G
D2PAK 800/Tape & Reel
(Pb−Free)
NJVMJB45H11T4G D2PAK 800/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MJB44H11/D
Free Datasheet http://www.datasheet4u.com/
1 page  
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
C
−B−
4
E
V
W
123
S
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
A
W
J
H
VARIABLE
CONFIGURATION
ZONE
L
M
R
M
N
L
U
M
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
P
L
F
VIEW W−W
1
FF
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
16.155
8.38
2X
1.016
2X
3.504
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NJVMJB44H11.PDF ] | |
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