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PDF 1N6468US Data sheet ( Hoja de datos )
| Número de pieza | 1N6468US | |
| Descripción | (1N6461US - 1N6468US) Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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1N6461US – 1N6468US
Available on
commercial
versions
Voidless Hermetically Sealed Unidirectional
Transient Voltage Suppressors
Qualified per MIL-PRF-19500/551
DESCRIPTION
This surface mount series of 500 watt voidless hermetically sealed unidirectional Transient
Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for
high-reliability applications where a failure cannot be tolerated. Working peak “standoff”
voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing
and internal Category 1 metallurgical bonds. These devices are also available in axial-leaded
packages for thru-hole mounting.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent of JEDEC registered 1N6461 thru 1N6468 series.
• Available as 500 watt peak pulse power (PPP).
• Working peak “standoff” voltage (VWM) from 5.0 to 51.6 volt.
• High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
• Triple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• Voidless hermetically sealed glass package.
• JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in
reference to MIL-PRF-19500 is also available.
(See part nomenclature for all available options.)
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Military and other high-reliability applications.
• Extremely robust construction.
• ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
• Protection from secondary effects of lightning per select levels in IEC61000-4-5.
• Square-end-cap terminals for easy placement.
• Nonsensitive to ESD per MIL-STD-750 method 1020.
• Inherently radiation hard as described in Microsemi “MicroNote 050”.
Qualified Levels:
JAN, JANTX, and
JANTXV
“B” SQ-MELF
Package
Also available in:
“B” Package
(axial –leaded)
1N6461 - 1N6468
MAXIMUM RATINGS @ 25 ºC
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Endcap
Forward Surge Current @ 8.3 ms half-sine
Forward Voltage @ 1 Amp
Peak Pulse Power @ 10/1000 µs
Reverse Power Dissipation (1)
Solder Temperature @ 10 s
Notes: 1. Derate at 50 mW/oC (see figure 4).
Symbol
TJ and TSTG
R ӨJEC
I FSM
VF
P PP
PR
Value
-55 to +175
20
80
1.5
500
2.5
260
Unit
oC
ºC/W
A
V
W
W
oC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0286-1, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
GRAPHS
1N6461US – 1N6468US
Time (t) in Milliseconds
FIGURE 3
8/20 µs Current Impulse Waveform
T4-LDS-0286-1, Rev. 1 (4/22/13)
T – Temperature - °C
FIGURE 4
Derating Curve
©2013 Microsemi Corporation
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 1N6468US.PDF ] | |
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