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1N6466US の電気的特性と機能

1N6466USのメーカーはMicrosemiです、この部品の機能は「(1N6461US - 1N6468US) Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N6466US
部品説明 (1N6461US - 1N6468US) Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors
メーカ Microsemi
ロゴ Microsemi ロゴ 




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1N6466US Datasheet, 1N6466US PDF,ピン配置, 機能
1N6461US – 1N6468US
Available on
commercial
versions
Voidless Hermetically Sealed Unidirectional
Transient Voltage Suppressors
Qualified per MIL-PRF-19500/551
DESCRIPTION
This surface mount series of 500 watt voidless hermetically sealed unidirectional Transient
Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for
high-reliability applications where a failure cannot be tolerated. Working peak “standoff”
voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing
and internal Category 1 metallurgical bonds. These devices are also available in axial-leaded
packages for thru-hole mounting.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Surface mount equivalent of JEDEC registered 1N6461 thru 1N6468 series.
Available as 500 watt peak pulse power (PPP).
Working peak “standoff” voltage (VWM) from 5.0 to 51.6 volt.
High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
Triple-layer passivation.
Internal “Category 1” metallurgical bonds.
Voidless hermetically sealed glass package.
JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in
reference to MIL-PRF-19500 is also available.
(See part nomenclature for all available options.)
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
Military and other high-reliability applications.
Extremely robust construction.
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
Protection from secondary effects of lightning per select levels in IEC61000-4-5.
Square-end-cap terminals for easy placement.
Nonsensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi “MicroNote 050”.
Qualified Levels:
JAN, JANTX, and
JANTXV
“B” SQ-MELF
Package
Also available in:
“B” Package
(axial –leaded)
1N6461 - 1N6468
MAXIMUM RATINGS @ 25 ºC
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Endcap
Forward Surge Current @ 8.3 ms half-sine
Forward Voltage @ 1 Amp
Peak Pulse Power @ 10/1000 µs
Reverse Power Dissipation (1)
Solder Temperature @ 10 s
Notes: 1. Derate at 50 mW/oC (see figure 4).
Symbol
TJ and TSTG
R ӨJEC
I FSM
VF
P PP
PR
Value
-55 to +175
20
80
1.5
500
2.5
260
Unit
oC
ºC/W
A
V
W
W
oC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0286-1, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

1 Page





1N6466US pdf, ピン配列
1N6461US – 1N6468US
ELECTRICAL CHARACTERISTICS
TYPE
1N6461US
1N6462US
1N6463US
1N6464US
1N6465US
1N6466US
1N6467US
1N6468US
MINIMUM
BREAK
DOWN
VOLTAGE
V (BR)
@ I(BR)
Volts
5.6
6.5
13.6
16.4
27.0
33.0
43.7
54.0
BREAKDOWN
CURRENT
I (BR)
RATED
WORKING
STANDOFF
VOLTAGE
V WM
mA V (pk)
25 5
20 6
5 12
5 15
2 24
1 30.5
1 40.3
1 51.6
MAXIMUM
STANDBY
CURRENT
ID
@ VRWM
MAXIMUM
CLAMPING
VOLTAGE
VC
@ 10/1000 µs
µA
3000
2500
500
500
50
3
2
2
V (pk)
9.0
11.0
22.6
26.5
41.4
47.5
63.5
78.5
MAXIMUM
PEAK IMPULSE
CURRENT
I PP
MAXIMUM
TEMP. COEF.
OF
α V(BR)
@ 8/20
µs
A (pk)
315
258
125
107
69
63
45
35
@ 10/1000
µs
A (pk)
56
46
22
19
12
11
8
6
%/oC
-0.03, +0.045
+0.060
+0.085
+0.085
+0.096
+0.098
+0.101
+0.103
T4-LDS-0286-1, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 3 of 6
Free Datasheet http://www.datasheet4u.com/


3Pages


1N6466US 電子部品, 半導体
1N6461US – 1N6468US
PACKAGE DIMENSIONS
Inch
Min Max
BL 0.137 0.148
BD 0.200 0.225
ECT 0.019 0.028
S 0.003 ---
Millimeters
Min Max
3.48 3.76
5.08 5.72
0.48 0.71
0.08 ---
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for information only.
3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations.
4. Dimensions are pre-solider dip.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
PAD LAYOUT
INCH
MILLIMETERS
A 0.288
7.32
B 0.070
1.78
C 0.155
3.94
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be placed
in the center between the pads
as an optional spot for cement.
T4-LDS-0286-1, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
1N6466US

(1N6461US - 1N6468US) QPL 500 Watt Surface Mount TVS

Semtech
Semtech
1N6466US

(1N6461US - 1N6468US) Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors

Microsemi
Microsemi


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