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1N5622USのメーカーはMicrosemiです、この部品の機能は「(1N5614US - 1N5622US) VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS」です。 |
部品番号 | 1N5622US |
| |
部品説明 | (1N5614US - 1N5622US) VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS | ||
メーカ | Microsemi | ||
ロゴ | |||
このページの下部にプレビューと1N5622USダウンロード(pdfファイル)リンクがあります。 Total 3 pages
SCOTTSDALE DIVISION
1N5614US thru 1N5622US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT STANDARD
RECOVERY GLASS RECTIFIERS
DESCRIPTION
This “standard recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/427 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction
using an internal “Category I” metallurgical bond. These devices are also available in
axial-leaded thru-hole package configurations (see separate data sheet for 1N5614 thru
1N5622). Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including fast and
ultrafast device types in both through-hole and surface mount packages.
APPEARANCE
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Surface mount package series equivalent to the
JEDEC registered 1N5614 to 1N5622 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
• Axial-leaded equivalents also available (see separate
data sheet for 1N5614 thru 1N5622)
• Standard recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction & Storage Temperature: -65oC to +200oC
• Thermal Resistance: 13oC/W junction to end cap
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Average Rectified Forward Current (IO): 1.0 Amps @
TA = 55ºC and 0.75 Amps @ TA = 100ºC
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
• MARKING & POLARITY: Cathode band only
• TAPE & REEL option: Standard per EIA-481-B
• WEIGHT: 193 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
WORKING
MINIMUM
AVERAGE
FORWARD
REVERSE
MAXIMUM REVERSE
PEAK
BREAKDOWN
RECTIFIED
VOLTAGE
CURRENT
SURGE RECOVERY
TYPE
REVERSE
VOLTAGE
CURRENT
(MAX.)
(MAX.)
CURRENT (NOTE 3)
VOLTAGE VRWM VBR @ 50μA
IO @ TA
(NOTE 1)
VF @ 3A
IR @ VRWM
IFSM
(NOTE 2)
trr
VOLTS
VOLTS
AMPS
55oC
100oC
VOLTS
μA
25oC
100oC
AMPS
μs
1N5614US
200
220 1.00 .750
0.5 25
30
2.0
1N5616US
400
440
1.00 .750 0.8 MIN. 0.5
25
30
2.0
1N5618US
600
660 1.00 .750
0.5 25
30
2.0
1N5620US
800
880
1.00 .750 1.3 MAX. 0.5
25
30
2.0
1N5622US
1000
1100
1.00 .750
0.5 25
30
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.
NOTE 2: TA = 100 oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals
2.0
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
Copyright © 2009
10-06-2009 REV D; SA7-45.pdf
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Free Datasheet http://www.datasheet4u.com/
1 Page SCOTTSDALE DIVISION
1N5614US thru 1N5622US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT STANDARD
RECOVERY GLASS RECTIFIERS
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously
been identified as “D-5A”
BD
BL
ECT
S
INCHES
MIN MAX
.097 .103
.185 .200
.019 .028
.003 ---
mm
MIN MAX
2.46 2.62
4.70 5.08
0.48 0.71
0.08 ---
PAD LAYOUT
INCHES
mm
A 0.246
B 0.067
6.25
1.70
C 0.105
2.67
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
Copyright © 2009
10-06-2009 REV D; SA7-45.pdf
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Free Datasheet http://www.datasheet4u.com/
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ 1N5622US データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
1N5622US | (1N56xxUS) HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER | Sensitron |
1N5622US | (1N5614US - 1N5622US) VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS | Microsemi |