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HER808G の電気的特性と機能

HER808GのメーカーはTaiwan Semiconductorです、この部品の機能は「(HER801G - HER808G) Glass Passivated High Efficient Rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 HER808G
部品説明 (HER801G - HER808G) Glass Passivated High Efficient Rectifiers
メーカ Taiwan Semiconductor
ロゴ Taiwan Semiconductor ロゴ 




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HER808G Datasheet, HER808G PDF,ピン配置, 機能
HER801G - HER808G
8.0 AMPS. Glass Passivated High Efficient Rectifiers
R-6
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Case: Molded plastic
Epoxy: UL 94V0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260oC/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Mounting position: Any
Weight: 1.65 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol HER HER HER HER HER HER HER HER
801G 802G 803G 804G 805G 806G 807G 808G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@TA = 55 oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
VRRM
VRMS
VDC
I(AV)
IFSM
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
50 100 200 300 400 600 800 1000
8.0
150
Maximum Instantaneous Forward Voltage
@ 8.0A
VF
1.0 1.3 1.7
Maximum DC Reverse Current
@TA=25 oC at Rated DC Blocking Voltage
@ TA=125 oC
Maximum Reverse Recovery Time ( Note 1 )
IR
Trr
10
400
50
80
Typical Junction Capacitance ( Note 2 )
Cj
100
65
Operating Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Units
V
V
V
A
A
V
uA
uA
nS
pF
oC
oC
Version: A06
Free Datasheet http://www.datasheet4u.com/

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部品番号部品説明メーカ
HER808G

(HER801G - HER808G) Glass Passivated High Efficient Rectifiers

Taiwan Semiconductor
Taiwan Semiconductor


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