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33N25 の電気的特性と機能

33N25のメーカーはFairchild Semiconductorです、この部品の機能は「FDB33N25」です。


製品の詳細 ( Datasheet PDF )

部品番号 33N25
部品説明 FDB33N25
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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33N25 Datasheet, 33N25 PDF,ピン配置, 機能
FDB33N25
250V N-Channel MOSFET
Features
• 33A, 250V, RDS(on) = 0.094@VGS = 10 V
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical 39 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
September 2005
UniFET TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GS
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA*
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2005 Fairchild Semiconductor Corporation
FDB33N25 Rev A
1
D
{
z

G{
z
z
{
S
FDB33N25
250
33
20.4
132
±30
918
33
23.5
4.5
235
1.89
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Min.
--
--
--
Max.
0.53
40
62.5
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

1 Page





33N25 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
102 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
Notes :
1. 250µ s Pulse Test
2. T = 25
C
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.25
0.20
0.15
0.10
0.05
0.00
0
VGS = 10V
VGS = 20V
※ ℃Note : TJ = 25
20 40 60 80
ID, Drain Current [A]
100
Figure 5. Capacitance Characteristics
4000
3000
2000
1000
0
10-1
Coss
C
iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Note ;
Crss
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
2
150oC
25oC
-55oC
Notes :
1. VDS = 40V
2. 250µ s Pulse Test
4 6 8 10
VGS, Gate-Source Voltage [V]
12
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
0.2
150
25
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V , Source-Drain voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
VDS = 50V
10
VDS = 125V
VDS = 200V
8
6
4
2
Note : ID = 33A
0
0 10 20 30 40
QG, Total Gate Charge [nC]
FDB33N25 Rev A
3 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


3Pages


33N25 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P---u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
FDB33N25 Rev A
6 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
33N25

FDB33N25

Fairchild Semiconductor
Fairchild Semiconductor


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