(PDF) UT4430 Datasheet - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Número de pieza	UT4430
Descripción	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Fabricantes	Unisonic Technologies
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No Preview Available ! UNISONIC TECHNOLOGIES CO., LTD UT4430 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4430 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=18A (VGS = 10V) * RDS(ON)<5.5mΩ@VGS=10V * RDS(ON)<7.5mΩ@VGS=4.5V * Halogen-Free SYMBOL Drain Power MOSFET Gate Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT4430L-S08-R UT4430G-S08-R Package SOP-8 Packing Tape Reel www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-333.A Free Datasheet http://www.datasheet4u.com/ 1 page UT4430 SWITCHING TIME TEST CIRCUIT Diode Recovery Test Circuit VDS + DUT VDS - ISD VGS IG L + VDC - VDD Power MOSFET Diode Recovery Waveforms ∫QRR = - Idt VGS ISD IF dI/dt tRR IRM VDS VDD TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-333.A Free Datasheet http://www.datasheet4u.com/ 5 Page

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PDF UT4430 Data sheet ( Hoja de datos )