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PDF UT4422 Data sheet ( Hoja de datos )
| Número de pieza | UT4422 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de UT4422 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
UT4422
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UT4422 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON) = 15mΩ @VGS = 10 V
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified
ORDERING INFORMATION
Ordering Number
UT4422G-S08-R
Package
SOP-8
Packing
Tape Reel
Power MOSFET
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-206.B
Free Datasheet http://www.datasheet4u.com/
1 page  
UT4422
TYPICAL CHARACTERISTICS(Cont.)
Gate-Charge Characteristics
10
VDS=15V
ID=11A
8
6
4
2
0
0 4 8 12 16 20
Gate Charge,QG (nC)
Power MOSFET
1500
Capacitance Characteristics
1250
1000
CISS
750
500
250
0
0
COSS
CRSS
5 10 15 20 25
Drain to Source Voltage,VDS (V)
30
100.0
10.0
1.0
Maximum Forward Biased Safe
Operating Area
RDS(ON)
Limited
100μs
1ms
10μs
10ms
0.1s
1s
10s
TJ(Max)=150°С
0.1 TA=25°С
DC
0.1 1 10
Drain to Source Voltage,VDS (V)
100
Single Pulse Power Rating
Junction-to-Ambient
50 TJ(Max)=150°С
TA=25°С
40
30
20
10
0
0.001 0.01
0.1 1 10 100 1000
Pulse Width (s)
Normalized Maximum Transient Thermal Impedance
10
D=TON/T
In descending order
TJ,PK=TA+PDM.ZθJA.θJA
D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse
θJA=40°С/W
1
0.1
0.01
0.00001
Single Pulse
0.0001
0.001
0.01 0.1
Pulse Width (s)
1
PDM
TO
N
T
10 100
1000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-206.B
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet UT4422.PDF ] | |
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