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UT4406 の電気的特性と機能

UT4406のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE」です。


製品の詳細 ( Datasheet PDF )

部品番号 UT4406
部品説明 N-CHANNEL ENHANCEMENT MODE
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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UT4406 Datasheet, UT4406 PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
UT4406
N-CHANNEL ENHANCEMENT
MODE
Power MOSFET
„ DESCRIPTION
The UT4406 can provide excellent RDS(ON), low gate charge
and operation with gate voltages as low as 2.5V by using UTC’s
advanced trench technology which makes an excellent high side
switch for notebook CPU core DC-DC conversion.
„ FEATURES
* RDS(ON) < 14m@VGS = 10 V
* RDS(ON) < 16.5m@VGS = 4.5 V
* RDS(ON) < 26m@VGS = 2.5 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
„ SYMBOL
2.Drain
SOP-8
Lead-free: UT4406L
Halogen-free: UT4406G
1.Gate
3.Source
„ ORDERING INFORMATION
Normal
UT4406-S08-R
UT4406-S08-T
Ordering Number
Lead Free
UT4406L-S08-R
UT4406L-S08-T
Halogen Free
UT4406G-S08-R
UT4406G-S08-T
Package
SOP-8
SOP-8
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-233.B
Free Datasheet http://www.datasheet4u.com/

1 Page





UT4406 pdf, ピン配列
UT4406
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current (Note 2)
Repetitive Avalanche Energy, L=0.1mH (Note 2)
Power Dissipation
TC=25°C
Junction Temperature
VDSS
VGSS
ID
IDM
IAV
EAV
PD
TJ
30
±12
11.5
80
25
78
3
+150
V
A
A
A
mJ
W
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
„ THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
MIN
TYP
MAX
UNIT
θJA
θJC
48
12
65
16
°C/W
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=24V, VGS=0V
VDS=0V, VGS=±12V
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
VGS(TH)
ID(ON)
RDS(ON)
VDS=VGS, ID=250µA
VDS=5V, VGS=4.5V
VGS=10V, ID=12A
VGS=4.5V, ID=10A
VGS=2.5V, ID=8A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=15V, VGS=0V, f=1MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS=10V, VDS=15V, RL=1.2,
RG=3
VDS=15V, VGS=4.5V, ID=11.5A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD IS=10A, VGS=0V
Maximum Body-Diode Continuous
Current
IS
Body Diode Reverse Recovery Time
tRR IF=10A, dI/dt=100A/μs
Body Diode Reverse Recovery
Charge
QRR IF=10A, dI/dt=100A/μs
MIN TYP MAX UNIT
30 V
1 µA
100 nA
0.8 1 1.5 V
60 A
11.5 14.8
13.5 17.5 m
19.5 26.8
1630
201
142
pF
pF
pF
4 ns
5 ns
32 ns
5 ns
18 nC
2.5 nC
5.5 nC
0.83 1
4.5
18.7
19.8
V
A
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-233.B
Free Datasheet http://www.datasheet4u.com/


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共有リンク

Link :


部品番号部品説明メーカ
UT4404

N-CHANNEL ENHANCEMENT MODE

Unisonic Technologies
Unisonic Technologies
UT4406

N-CHANNEL ENHANCEMENT MODE

Unisonic Technologies
Unisonic Technologies


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